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33 results about "Electron scanning microscopy" patented technology
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Scanning electron microscope (SEM), type of electron microscope, designed for directly studying the surfaces of solid objects, that utilizes a beam of focused electrons of relatively low energy as an electron probe that is scanned in a regular manner over the specimen.
Method for determining contribution of pores with different apertures in shale reservoir stratum to porosity
InactiveCN103512838AAchieving precise measurementsEasy to operatePermeability/surface area analysisPorosityAnalysis data
The invention discloses a method for determining contribution of pores with different apertures in a shale reservoir stratum to porosity, and belongs to the technical field of petroleum, geology and mining exploration and development. The method comprises the following steps: selecting three groups of parallel samples from shale reservoir stratum samples at the same depth; carrying out a low-temperature nitrogen adsorption-desorption experiment on the first group of samples to determine contribution of the pores with aperture ranging from 0.4-100 nm to the porosity; carrying out argon ion polishing and electron scanning microscope examination on the second group of samples to determine the contribution of the pores with aperture ranging from 50 nm to 3 microns to the porosity; carrying out mercury intrusion analysis on the third group of samples to determine the contribution of the pores with aperture greater than 1000 nm to the porosity; synthesizing the analytic data of the three groups of parallel samples, and obtaining the determination results of contribution of the pores with different apertures in the shale reservoir stratum to the porosity. The method can determine the contribution of the pores with different apertures in the shale reservoir stratum to the porosity, and overcomes the defect of the conventional gas adsorption method and the mercury intrusion method for determining the contribution of the pores with different apertures in the shale reservoir stratum to the porosity.
Owner:CHINA UNIV OF PETROLEUM (EAST CHINA)
Non-woven fabric, and sheet and artificial leather produced from the same
InactiveUS6566287B1Satisfies requirementFine and uniform and fiber space structureSynthetic resin layered productsWoven fabricsNonwoven fabricElectron scanning microscopy
A non-woven fabric having such a structure that fine fibers having a small fineness are entangled with one another and a sheet obtained by impregnating the non-woven fabric with an elastic polymer satisfy the following requirements:the fine fibers should be obtained by splitting a strippable and splittable composite short fiber comprising at least two components; the fine fibers should have a monofilament size of 0.01 to 0.5 denier; the fine fibers should form a fine non-woven fabric structure that they are entangled with one another at random; the apparent density should be 0.18 to 0.45 g / cm3; the average area of spaces between fibers in the cross section of the non-woven fabric measured by the image analysis of an electron scanning microscope should be 70 to 250 mum2; and the non-woven fabric should have such a uniform structure that the standard deviation of the area of a space between fibers in the cross section of the non-woven fabric measured by the image analysis of the electron scanning microscope is 200 to 600 mum2.The non-woven fabric and sheet are advantageously used as a substrate for artificial leather.
Owner:TEIJIN LTD +1
Steel material microstructure automatic identification method based on deep learning
ActiveCN110619355ABig errorManual classification is inefficientCharacter and pattern recognitionMachine learningStochastic gradient descentData set
The invention discloses a steel material microstructure automatic identification method based on deep learning. The method comprises the following steps: 1, determining the microstructure type and microstructure magnification times of to-be-identified steel, collecting historical steel material microstructure pictures with the same specification and size obtained by an electronic scanning microscope under the magnification times to obtain a data set, and determining a category label for each picture in the data set; 2, performing the same preprocessing on all the pictures collected in the step1; 3, constructing a convolutional neural network CNN-ICAM model; 4, presetting the number of iterations, using cross entropy as a loss function, and training a neural network CNN-ICAM model by usinga stochastic gradient descent method; and 5, preprocessing a steel material microstructure picture to be recognized according to the method in the step 2, and then automatically recognizing the steelmaterial microstructure picture by using the convolutional neural network model trained in the step 4. The method not only can improve the identification precision, but also can improve the recognition speed.
Owner:WUHAN UNIV OF SCI & TECH
Failure analysis method for PCB (Printed Circuit Board)
The invention discloses a failure analysis method for a PCB (Printed Circuit Board). The failure analysis method comprises the steps of: (1) performing optical appearance inspection on the PCB to judge whether contamination or cracking phenomena exist in the PCB; (2) performing electrical performance detection on the PCB judged to be with the contamination or cracking phenomena in the step (1) to judge whether electrical abnormality exists in the PCB; (3) performing X-RAY detection on the PCB judged to undergo electrical abnormality in the step (2) to judge whether welding on the PCB is good or not; (4) performing electronic scanning microscope observation on the PCB judged to undergo welding abnormality in the step (3); and (5) performing energy spectrum analysis on the PCB treated in the step (4). According to the failure analysis method for the PCB in the invention, by performing the optical appearance inspection, the electrical performance detection, the X-RAY detection and the electronic scanning microscope observation on the PCB, the failure phenomenon of the PCB can be detected effectively and rapidly.
Owner:SHANGHAI FALAB TEST
Method for judging leakage current in integrated circuit and MOS element
ActiveCN101025427AFind out the intensityReduced feedback timeSemiconductor/solid-state device testing/measurementCurrent/voltage measurementGray levelScanning electron microscope
The invention provides a method for judging leakage current in an integrated circuit and a metal oxide semiconductor element. The method includes providing a substrate having a target structure with a first region and a second region. The second zone is first grounded, and then the substrate is scanned using a scanning electron microscope to generate a voltage contrast image. After that, determine the gray scale level of the first interval in the voltage comparison image, and use the gray scale level to determine the leakage current between the first interval and the second interval. The method for judging the leakage current in the integrated circuit and the metal oxide semiconductor element of the present invention can shorten the feedback time for detecting the leakage current, quickly find out the location and intensity of the leakage current, and provide more accurate calibration during the manufacturing process .
Owner:TAIWAN SEMICON MFG CO LTD
Wafer defect searching system and wafer defect searching method
InactiveCN108321096ASolve the speed problemResolve accuracySemiconductor/solid-state device testing/measurementEngineeringElectron scanning microscopy
The present invention relates to a wafer defect searching method. The wafer defect searching method comprises the following steps: a detection machine detects defect information of a wafer and transmits the defect information to an electronic scanning microscope; and the electronic scanning microscope photographs the wafer according to the defect information. The invention can quickly and accurately detect defects on the upper, lower and side surfaces of the wafer by using the detection machine, determine the defect information of the detected wafer, and transmit the defect information to theelectronic scanning microscope; and the electronic scanning microscope can quickly and accurately find the position of the defect on the wafer according to the defect information, and automatically take a photo of the defect on the wafer. The invention solves the problem that the manual photographing speed of the wafer is slow and the position of the defect is inaccurate, can improve the production efficiency, can provide a powerful help for finding the cause of the defects on the wafer, and has great significance for improving the yield of the products.
Owner:SHANGHAI HUALI MICROELECTRONICS CORP
Method for determining lens errors in a particle-optical device
ActiveCN1924553ASure easyLens error reductionElectric discharge tubesSurface/boundary effectLight beamScanning electron microscope
The invention relates to a method for determining lens errors in a Scanning Electron Microscope, more specifically to a sample that enables such lens errors to be determined. The invention describes, for example, the use of cubic MgO crystals which are relatively easy to produce as so-called 'self-assembling' crystals on a silicon wafer. Such crystals have almost ideal angles and edges. Even in the presence of lens errors this may give a clear impression of the situation if no lens errors are present. This enables a good reconstruction to be made of the cross-section of the beam in different under- and over-focus planes. The lens errors can then be determined on the basis of this reconstruction, whereupon they can be corrected by means of a corrector.
Owner:FEI CO
Process for automatically detecting silicon chip edge
ActiveCN101452867AImprove analyzabilityImprove accuracySemiconductor/solid-state device testing/measurementMaterial resourcesSilicon chip
The invention discloses a method for automatically detecting the edge of a silicon chip. The method comprises: step one, an automatic defect detector scans the silicon chip and stores a scanning result to form a file with a KLARF format; step two, a virtual crystal element is added to the KLARF file stored in the step one; the virtual crystal element integrally covers the edge of the whole silicon chip; step three, a coordinate of a detection point of the edge of the silicon chip is calculated in a coordinate system adopted by the KLARF file; step four, the coordinate of the detection point calculated in the step three is used as virtual defect and is added to the KLARF file edited in the step two; and step five, an electron scanning microscope is used to carry out automatic detection on the virtual defect of the KLARF file edited in the step four. Through functional integration of data analytic software and a detection machine, the method realizes automatic detection on the position of the edge of the silicon chip, saves manpower and material resource, improves efficiency and strengthens data accuracy and analyzability.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Measurement method and device of striation-shaped morphology characterization parameters
ActiveCN107561106AQuantifying Electrical Performance EffectsUsing wave/particle radiation meansMaterial analysis by measuring secondary emissionMeasurement deviceElectron scanning microscopy
The invention discloses a measurement method of striation-shaped morphology characterization parameters, which is used for quantitatively measuring the severity of striation-shaped morphology etched by deep holes. The method comprises the following steps: obtaining a hole section image output by an electronic scanner microscope, and identifying a centre point coordinate of a hole in the hole section image; obtaining the length values of n diameters at the centre point coordinate, and ensuring that n is an integer greater than 1; computing the variance of the length values of the n diameters, and taking the variance as a striation-shaped morphology characterization parameter of the hole. The invention further discloses a measurement device of striation-shaped morphology characterization parameters.
Owner:YANGTZE MEMORY TECH CO LTD
Detection method for electric connection defect of chip
ActiveCN109946586AAccurate observationReduce stackingElectronic circuit testingOptically investigating flaws/contaminationElectricityInterconnection
The invention discloses a detection method for an electric connection defect of a chip. The method comprises that a substrate is removed to expose the end portion of a conductive channel in the lowermost layer connected to an active region on a substrate; a first mode of an electron scanning microscope is used to obtain morphology images of multiple layers of conductive channels from the lowermostone; a second mode of the electron scanning microscope is used to obtain morphology images of interconnection lines of the layers from the lowermost layer; in the morphology images of multiple layersof conductive channels, defect positioning information of the interconnection line in the subsequent layer is obtained according to the contrast of the end portions of the different conductive channels; and in the morphology images of the interconnection lines of the layers, a defect position is discovered according to the defect positioning information. The work voltage of the first mode is lower than that of the second mode. The method can be used to locate the defect position rapidly.
Owner:YANGTZE MEMORY TECH CO LTD
Sample and method for evaluating resolution of scanning electron microscope, and electron scanning microscope
InactiveUS20080067337A1High precisionIncrease production capacityMaterial analysis using wave/particle radiationElectric discharge tubesScanning tunneling microscopeImage resolution
In the case of monitoring a resolution of a scanning electron microscope, it is required to prepare a sample and to use a measuring algorithm so as to reduce the pattern dependency of an index value of resolution to be measured in order to measure a variation in the size of an electron beam with a high degree of accuracy. According to the present invention, there is used a sample having a sectional shape which is appropriate for monitoring the resolution, that is, the sample has a pattern with such a sectional shape that a side wall of the pattern is inclined so as to prevent an electron beam irradiated on the sample from impinging upon the side wall of the pattern. With this configuration, it is possible carry out such resolution monitor that does not depend upon a sectional shape of a pattern.
Owner:HITACHI HIGH-TECH CORP
Preparation method of nanometer alpha-Fe2O3
InactiveCN104556242AHigh reactivityHigh selectivityNanotechnologyFerric oxidesChemical industryElectron scanning microscopy
The invention discloses a preparation method of nanometer alpha-Fe2O3, and belongs to the technical field of chemical industry. The method is characterized in that an active substance is added to 50g of a Fe(NO3)3 solution with the concentration of 10%, and is mixed and dissolved, an alkaline solution is added, the obtained mixture is heated and refluxed, and the obtained material undergoes liquid-solid separation to obtain the nanometer alpha-Fe2O3. The method concretely comprises the following steps: adding a certain amount of the active substance to 50g of the Fe(NO3)3 solution with the concentration of 10%, fully mixing and dissolving the active substance in the Fe(NO3)3 solution, adding the alkaline solution with a certain concentration to adjust the pH value to a value in a certain range, carrying out heating boiling refluxing for a certain time, and carrying out liquid-solid separation at a certain temperature for a certain time to obtain the nanometer alpha-Fe2O3. The average particle size of the obtained alpha-Fe2O3 is 2-5nm; and an electron scanning microscopy result shows that the alpha-Fe2O3 prepared through the method has suitable grain size and uniform distribution.
Owner:CHINA PETROLEUM & CHEM CORP +1
Method for detecting diameter-to-thickness ratio of flake alumina particles
Owner:GUIZHOU BRANCH CHINA ALUMINUM IND
Metal nano-powder slurry scraping tool
ActiveCN103592164AJudging Dispersion EffectsObserve flatnessPreparing sample for investigationDispersityMetallurgy
The invention discloses a metal nano-powder slurry scraping tool which comprises a slurry scraping metal column (1) which is rectangular or square, wherein a first slurry scraping hole (2) is formed in the upper surface of the slurry scraping metal column (1); a through hole (3) is formed in the slurry scraping hole and leads to the lower surface of a column body. The metal nano-powder slurry scraping tool has the benefits as follows: after being scraped by the tool, nano-powder slurry can form a uniform smooth plane, so that the smoothness of the slurry plane can be conveniently observed through an electronic scanning microscope and the dispersity effect of metal nano-powder can be intuitively judged.
Owner:JIANGSU BOQIAN NEW MATERIALS
Electron scanning microscope and image generation method
ActiveUS20160343538A1Reduce damage rateImprove convenienceElectric discharge tubesScanning tunneling microscopeScanning electron microscope
In a scanning electron microscope, an atmospheric pressure space having a specimen arranged therein and a vacuum space arranged on a charged particle optical system side are isolated from each other using an isolation film that transmits charged particle beams. The scanning electron microscope has an electron optical lens barrel, a chassis, and an isolation film. The electron optical lens barrel radiates a primary electron beam onto a specimen. The chassis is directly bonded to the inside of the electron optical lens barrel and has an inside that turns into a lower vacuum state than the inside of the electron optical lens barrel at least during the radiation of the primary electron beam. The isolation film isolates a space in an atmospheric pressure atmosphere having a specimen mounted therein and the inside of the chassis in a lower vacuum state, and transmits the primary charged particle beam.
Owner:HITACHI HIGH-TECH CORP
Method for researching sand soil solidification effects by carbonic anhydrase mineralization bacteria
InactiveCN109142092AWeighing by removing componentMaterial strength using steady shearing forcesMicroscopic imageX-ray
The invention discloses a method for researching sand soil solidification effects by carbonic anhydrase mineralization bacteria. The method includes the steps: firstly, solidification sample preparation; secondly, direct shear experiment; thirdly, calcium carbonate content measurement; fourthly, X-ray diffraction experiment sample preparation; fifthly, electron scanning microscope experiment sample preparation. According to the method, the solidification effects of different grouting modes are explored, sand soil solidification experiments of factors such as calcium source kinds, solidification environment temperature, consolidating fluid concentration and particle diameter are implemented, the solidification effects are compared, and the modes, the concentration and the like with optimalsolidification effects are preferentially selected. The solidification effects of a solidification sample are represented by comparing and analyzing shearing strength and calcium carbonate depositionof the solidification sample under different conditions, a crystal form of calcium carbonate is acquired by an X-ray diffraction instrument, and a microscopic image of the solidification sample is observed by a scanning electron microscope.
Owner:SOUTHWEAT UNIV OF SCI & TECH
Experimental simulation method of pre-op site selection of coronary artery bypass graft anastomosis
InactiveCN101828967AObvious protective effectPromote hyperplasiaDiagnosticsSurgeryPeristaltic pumpHuman body
The invention discloses an experimental simulation method of a pre-op site selection of coronary artery bypass graft anastomosis, comprising the following steps of: preparing the anastomotic models of different formations; cultivating human vessel histocyte obtained by separation in DMEM containing 10% fetal calf serum (GIBCO) in the atmosphere of 5% CO2 at 37 DEG C till fusing, then digesting toprepare cell suspension, cultivating the cells on a glass slide, placing the glass slide in a six-orifice plate for standing cultivation for 6 h for later use; fixing the glass slide carried with thecultivated vessel histocyte in an anastomotic opening area of the anastomotic model; connecting the whole anastomotic model to a closed-circuit perfusion system which is driven by a peristaltic pump,simulating blood flow of human body to perform dynamic loading experiment, taking out the cell glass slide to image with a fluorescence microscope, and scanning with an electron scanning microscope.
Owner:郭应强
Sample and method for evaluating resolution of scanning electron microscope, and electron scanning microscope
InactiveUS7605364B2Increase production capacityHigh precisionMaterial analysis using wave/particle radiationElectric discharge tubesImage resolutionScanning tunneling microscope
Owner:HITACHI HIGH-TECH CORP
Sample preparation method for electron microscope scanning
InactiveCN109239112ASimple and safe operationAvoid deformationMaterial analysis using wave/particle radiationHigh concentrationDevelopmental stage
The invention belongs to the technical field of sample preparation, and discloses a sample preparation method for electron microscope scanning. The method comprises the following steps: taking out a sample from glutaraldehyde stationary liquid, and cleaning the sample for three times with a PBS buffer solution for 20 min each time; fixing the sample by uising 1% citric acid for 1 h, cleaning the sample for three times with the PBS with pH of 7 .4 for 15 min each time; performing dehydration by using low concentration gradient ethanol, and performing the dehydration by using 30% ethanol and 50%ethanol for 15 min respectively; and performing dehydration by using high concentration gradient ethanol. According to the sample preparation method disclosed by the invention, by exploring and improving the sample preparation technology of the electron scanning microscope (SEM), electron microscope samples of various developmental stages of mosquitoes are not only successfully prepared, electronmicroscope photographing and re-description are comprehensively performed on ultrafine structures of the anopheles sinensis at various developmental stages, thereby not only providing a more comprehensive technique for the preparation of the insect electron microscope samples, but also providing more detailed morphological characteristic data for the taxonomic analysis of the anopheles sinensis.
Owner:CHONGQING NORMAL UNIVERSITY
Test Apparatus
ActiveUS20090072138A1Large capacityIncrease speedMaterial analysis using wave/particle radiationElectric discharge tubesElectron microscopeTest fixture
A scan control unit for generating two-dimensional coordinates for performing a scan with an electron beam of an electron scanning microscope is provided with first and second transforming units for transforming coordinates in the horizontal (X) direction and the vertical (V) direction. An area to be tested in a sample is scanned with an electron beam in an arbitrary direction. As the first and second transforming units, small-capacity transformation tables (LUTs) capable of operating at high speed in each of the horizontal (X) direction and the vertical (Y) direction are used. By also using a large-capacity transformation table (LUT) that stores coordinate transformation data corresponding to plural scan types, a test apparatus compatible with the plural scan types, having multiple functions, and capable of performing high-speed scan control is realized.
Owner:HITACHI HIGH-TECH CORP
Hole spacing measuring method and apparatus of hole etching morphology
InactiveCN107588745AAutomate your measurementsHigh measurement accuracyUsing wave/particle radiation meansMeasurement deviceElectron scanning microscopy
The application discloses a hole spacing measuring method of hole etching morphology, and is used for automatically measuring the hole spacing of the hole etching morphology. The method includes: obtaining a hole profile image output by an electronic scanning microscope and recognizing a central point coordinate of a first hole and a central point coordinate of a second hole in the hole profile image, and the first hole and the second hole are located in different horizontal rows and adjacent in the hole profile image; calculating an absolute value of a difference between the central point coordinate of the first hole and the central point coordinate of the second hole in the direction of a longitudinal coordinate axis, and regarding the absolute value as a first distance; and determiningthe first distance as the hole spacing between the first hole and the second hole. The application also discloses a hole spacing measuring apparatus of the hole etching morphology.
Owner:YANGTZE MEMORY TECH CO LTD
Method for detecting silicon chip edge automatically
ActiveCN100590832CImprove analyzabilityImprove accuracySemiconductor/solid-state device testing/measurementMaterial resourcesSilicon chip
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Monitoring method of environmental magnetic shield of electronic scanning microscope
Owner:SHANGHAI HUALI MICROELECTRONICS CORP
Evaluation method for material selection of abradable sealing coating system from the perspective of corrosion protection
ActiveCN112649356BHigh precisionExperimental requirements are simpleWeather/light/corrosion resistanceEfficient propulsion technologiesCoating systemElement analysis
Owner:INST OF METAL RESEARCH - CHINESE ACAD OF SCI
Electron scanning microscope and image generation method
ActiveUS9875877B2Reduce damage rateReduce replacement frequencyMaterial analysis using wave/particle radiationElectric discharge tubesScanning tunneling microscopeScanning electron microscope
Owner:HITACHI HIGH-TECH CORP
A metal nanopowder squeegee tool
ActiveCN103592164BJudging Dispersion EffectsObserve flatnessPreparing sample for investigationDispersityMetallurgy
The invention discloses a metal nano-powder slurry scraping tool which comprises a slurry scraping metal column (1) which is rectangular or square, wherein a first slurry scraping hole (2) is formed in the upper surface of the slurry scraping metal column (1); a through hole (3) is formed in the slurry scraping hole and leads to the lower surface of a column body. The metal nano-powder slurry scraping tool has the benefits as follows: after being scraped by the tool, nano-powder slurry can form a uniform smooth plane, so that the smoothness of the slurry plane can be conveniently observed through an electronic scanning microscope and the dispersity effect of metal nano-powder can be intuitively judged.
Owner:JIANGSU BOQIAN NEW MATERIALS
Experimental simulation method of pre-op site selection of coronary artery bypass graft anastomosis
InactiveCN101828967BObvious protective effectPromote hyperplasiaDiagnosticsSurgeryPeristaltic pumpBlood Vessel Tissue
Owner:郭应强
Preparation method and use method for test sample used for measuring length of lightly doped drain
ActiveCN106653611AEffective monitoring of doping processImprove stabilitySemiconductor/solid-state device testing/measurementSemiconductor/solid-state device manufacturingProduction lineInsulation layer
The invention provides a preparation method and a use method for a test sample used for measuring the length of a lightly doped drain. According to the preparation method, light resistance (7) on an interlayer insulation layer (6) is subjected to exposure and development to ensure that the light resistance (7) above a lightly doped drain (33) and the periphery of the lightly doped drain is removed by development, then the residual light resistance (7) is taken as a shielder, the interlayer insulation layer (6) and a gate insulation layer (4) are subjected to dry etching, and a gate (5), the lightly doped drain (33) and at least part of a heavily doped region (32) connected with the lightly doped drain (33) are exposed; and a vertical view image of the test sample is shot by using an electron scanning microscope in a production line, and the length, namely, the actual length of the lightly doped drain (33), from the edge of the gate (5) to a boundary line of the lightly doped drain (33) and the heavily doped region (32) is measured on the vertical view image, so that a doping process of the LDD (Lightly Doped Drain) can be effectively monitored in the production line, and the product stability and reliability are improved.
Owner:WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
A method for determining the contribution of pores with different pore sizes to porosity in shale reservoirs
InactiveCN103512838BAchieving precise measurementsEasy to operatePermeability/surface area analysisPorosityDesorption
The invention discloses a method for determining contribution of pores with different apertures in a shale reservoir stratum to porosity, and belongs to the technical field of petroleum, geology and mining exploration and development. The method comprises the following steps: selecting three groups of parallel samples from shale reservoir stratum samples at the same depth; carrying out a low-temperature nitrogen adsorption-desorption experiment on the first group of samples to determine contribution of the pores with aperture ranging from 0.4-100 nm to the porosity; carrying out argon ion polishing and electron scanning microscope examination on the second group of samples to determine the contribution of the pores with aperture ranging from 50 nm to 3 microns to the porosity; carrying out mercury intrusion analysis on the third group of samples to determine the contribution of the pores with aperture greater than 1000 nm to the porosity; synthesizing the analytic data of the three groups of parallel samples, and obtaining the determination results of contribution of the pores with different apertures in the shale reservoir stratum to the porosity. The method can determine the contribution of the pores with different apertures in the shale reservoir stratum to the porosity, and overcomes the defect of the conventional gas adsorption method and the mercury intrusion method for determining the contribution of the pores with different apertures in the shale reservoir stratum to the porosity.
Owner:CHINA UNIV OF PETROLEUM (EAST CHINA)
Method for Measuring Length of Lightly Doped Drain Region in Array Substrate
ActiveCN107195562BMonitor doping processImprove stabilitySemiconductor/solid-state device testing/measurementInsulation layerStrong acids
The invention provides a method of measuring the length of a lightly doped drain (LDD) region in an array substrate. A strong alkaline solution is firstly used to corrode and exfoliate the source (251), the drain (252) of a TFT (Thin Film Transistor) (2) and the above film layer in a layer by layer mode; a strong acid solution is then used to corrode and exfoliate an interlayer insulation layer (24) and a gate insulation layer (22) which is not covered by a gate (23); and finally, an electron scanning microscope is used to photograph a down-looking image of the array substrate, and the length between the edge of the gate (23) and a boundary line between the lightly doped drain region (212) and a heavily doped region (213) on the down-looking image is measured, and the length is the actual length of the lightly doped drain region (212). The LDD doping process can be effectively monitored, and the stability and the reliability of products are enhanced.
Owner:WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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