Hole spacing measuring method and apparatus of hole etching morphology

A measurement method and hole spacing technology, applied in the direction of measuring devices, instruments, and using wave/particle radiation, can solve the problems of time-consuming, poor precision and accuracy, etc., and achieve the goal of improving measurement efficiency, measurement precision and accuracy Effect

Inactive Publication Date: 2018-01-16
YANGTZE MEMORY TECH CO LTD
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of this, the present application provides a method and device for measuring hole spacing of hole etching topography to solve the technical problems in the prior art that the precision and accuracy of manual measurement of hole spacing are poor and time-consuming

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Hole spacing measuring method and apparatus of hole etching morphology
  • Hole spacing measuring method and apparatus of hole etching morphology
  • Hole spacing measuring method and apparatus of hole etching morphology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0046] In order to make the above objects, features and advantages of the present application more obvious and understandable, the embodiments of the present application will be further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0047] In practical applications, in the deep hole etching process, deep hole etching can be performed on the wafer, and multiple rows of deep holes are etched to process some electronic devices. The hole spacing between different horizontal rows of deep holes will affect Subsequent filling process will ultimately affect the electrical performance of the device. In order to solve the technical problems of poor accuracy and time-consuming manual measurement of hole spacing in the prior art, an embodiment of the present application provides a method and device for measuring hole spacing of hole etching topography, based on image capture and The computer software quantitatively characteri...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The application discloses a hole spacing measuring method of hole etching morphology, and is used for automatically measuring the hole spacing of the hole etching morphology. The method includes: obtaining a hole profile image output by an electronic scanning microscope and recognizing a central point coordinate of a first hole and a central point coordinate of a second hole in the hole profile image, and the first hole and the second hole are located in different horizontal rows and adjacent in the hole profile image; calculating an absolute value of a difference between the central point coordinate of the first hole and the central point coordinate of the second hole in the direction of a longitudinal coordinate axis, and regarding the absolute value as a first distance; and determiningthe first distance as the hole spacing between the first hole and the second hole. The application also discloses a hole spacing measuring apparatus of the hole etching morphology.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular to a method and device for measuring hole spacing of hole etching topography. Background technique [0002] When processing specific electrical devices, a deep hole etching process is used. In the deep hole etching process, the distance between the holes will change as the etching progresses, which may cause bridges (merge) between adjacent holes. , see figure 1 shown. Therefore, the hole spacing between one row of holes and another adjacent row of holes will affect the subsequent filling process and affect the electrical performance of the device. [0003] In the prior art, the transverse section of the deep hole can be manually measured by a scanning electron microscope (SEM), and the distance between the center of the deep hole can be measured. The transverse section image of the deep hole can be found in figure 2 shown. However, the subjective factors of ma...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01B15/00
Inventor 苏恒王琨王猛陈保友芈健陈子琪刘隆冬闫伟明肖为引
Owner YANGTZE MEMORY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products