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A method and device for measuring characteristic parameters of streak-like morphology

A technology of shape characterization and parameters, which is applied in the field of measurement of striation-like shape characterization parameters, can solve the problem of inability to quantitatively analyze the severity of striae-like shape

Active Publication Date: 2020-06-05
YANGTZE MEMORY TECH CO LTD
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  • Abstract
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Problems solved by technology

[0004] In view of this, the present application provides a method and device for measuring the characteristic parameters of the streak-like morphology to solve the technical problem in the prior art that the severity of the streak-like morphology cannot be quantitatively analyzed

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  • A method and device for measuring characteristic parameters of streak-like morphology
  • A method and device for measuring characteristic parameters of streak-like morphology
  • A method and device for measuring characteristic parameters of streak-like morphology

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Embodiment Construction

[0048] In order to make the above objectives, features, and advantages of the present application more obvious and understandable, the following describes the embodiments of the present application in further detail with reference to the accompanying drawings and specific implementations.

[0049] In practical applications, deep hole etching can be performed on the wafer to process certain electronic devices. In the deep hole etching process, the contour of the etched deep hole may have a streak-like appearance. In order to solve the technical problem that the severity of the streak-like morphology cannot be quantitatively analyzed in the prior art, the embodiments of the present application provide a method and device for measuring the streak-like morphology characterization parameters, by fitting the deep hole etching morphology The boundary of the medium and deep hole obtains the coordinates of the center point of the deep hole. By calculating the length values ​​of the multipl...

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Abstract

The invention discloses a measurement method of striation-shaped morphology characterization parameters, which is used for quantitatively measuring the severity of striation-shaped morphology etched by deep holes. The method comprises the following steps: obtaining a hole section image output by an electronic scanner microscope, and identifying a centre point coordinate of a hole in the hole section image; obtaining the length values of n diameters at the centre point coordinate, and ensuring that n is an integer greater than 1; computing the variance of the length values of the n diameters, and taking the variance as a striation-shaped morphology characterization parameter of the hole. The invention further discloses a measurement device of striation-shaped morphology characterization parameters.

Description

Technical field [0001] This application relates to the field of semiconductor technology, and in particular to a method and device for measuring streak-shaped topography characterization parameters. Background technique [0002] When processing specific electrical devices, a deep hole etching process is used. In the deep hole etching process, the contour of the deep hole etched may have a striation. The form of streak-like appearance is: see figure 1 As shown, the deep hole appears as vertical streaks on the longitudinal section; see figure 2 As shown, the edge of the hole in the cross section of the deep hole is jagged. The streak-like morphology of the deep hole will adversely affect the subsequent filling process in the hole and affect the electrical performance of the device. [0003] In the prior art, the longitudinal section and the transverse section of the deep hole can be observed through a scanning electron microscope (SEM) to qualitatively characterize the severity of ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N23/2251G01B15/00G01B15/04
Inventor 苏恒王琨王猛陈保友芈健陈子琪刘隆冬闫伟明朱喜峰
Owner YANGTZE MEMORY TECH CO LTD
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