Bulk acoustic wave resonator with mass adjustment structure and its application in bulk acoustic wave filter
A quality adjustment, wave resonator technology, applied in the direction of impedance network, electrical components, etc., can solve the problems of flatness, conduction characteristics, influence, etc.
Active Publication Date: 2021-03-26
WIN SEMICON
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Problems solved by technology
However, forming this protruding structure on the edge of the upper surface of the bottom electrode 91 will deteriorate the flatness of the piezoelectric layer 92 during the manufacturing process, thereby affecting the overall flatness of the resonant film of the bulk acoustic wave resonator. The characteristics of sound wave transmission in the resonant membrane of the bulk acoustic wave resonator will be affected, so that the resonance characteristics of the bulk acoustic wave resonator will be adversely affected
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Embodiment Construction
[0035] The invention provides a bulk acoustic wave resonator with mass adjustment structure, which includes: a supporting layer, a bottom metal layer, a piezoelectric layer, a top metal layer and a mass adjustment structure. Wherein the support layer is formed on the substrate, wherein the support layer has a cavity, and the cavity has a top inner surface; the bottom metal layer is formed on the support layer; the piezoelectric layer is formed on the bottom metal layer; the top metal layer is formed on the piezoelectric layer on. The acoustic resonance area is defined by an overlapping area of projections of the top metal layer, the piezoelectric layer, the bottom metal layer, the supporting layer and the cavity, wherein the acoustic resonance area is divided into an edge area and a central area. The edge area is divided into a first edge sub-area and a second edge sub-area, and the second edge sub-area is between the central area and the first edge sub-area. Wherein the ma...
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The invention provides a bulk acoustic wave resonator having a quality adjustment structure and an application in a bulk acoustic wave filter thereof. The bulk acoustic wave resonator comprises a supporting layer, a bottom metal layer, a piezoelectric layer, a top metal layer and the quality adjustment structure, wherein the supporting layer is formed on a substrate; the supporting layer is provided with a hollow cavity; the hollow cavity is provided with a top inner surface; the bottom metal layer is formed on the supporting layer; the piezoelectric layer is formed on the bottom metal layer;the top metal layer is formed on the piezoelectric layer; an acoustic wave resonance area is defined by the top metal layer, the piezoelectric layer, the bottom metal layer, the supporting layer as well as an overlapped area of a projection of the hollow cavity; the acoustic wave resonance area is divided into an edge area and a central area; the quality adjustment structure comprises an edge quality adjustment structure; and the edge quality adjustment structure is formed in an edge area on the top inner surface.
Description
technical field [0001] The invention relates to a bulk acoustic wave resonator with a quality adjustment structure, which has the advantages of enhancing the mechanical strength of the resonance film of the bulk acoustic wave resonator, enhancing the quality factor of the bulk acoustic wave resonator, and suppressing parasitic modes. Background technique [0002] see Figure 10 , which is a specific embodiment of the integrated acoustic wave resonator in the prior art. It includes: a substrate 90 , a bottom electrode 91 , a piezoelectric layer 92 , a top electrode 93 , a cavity 94 and an annular piezoelectric layer groove 95 . The bottom electrode 91 is formed on the substrate 90 ; the piezoelectric layer 92 is formed on the bottom electrode 91 ; the top electrode 93 is formed on the piezoelectric layer 92 ; the cavity 94 is formed on the bottom substrate 90 of the bottom electrode 91 . The portion where the top electrode 93 , the piezoelectric layer 92 and the bottom elect...
Claims
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IPC IPC(8): H03H9/02H03H9/17
CPCH03H9/02007H03H9/02086H03H9/174
Inventor 张家达江志烽谢子笙
Owner WIN SEMICON