A plasma processor, etching uniformity adjustment system and method

Abstract

The invention discloses an etching uniformity adjusting system. The system comprises feedback adjusting devices and a calculation control unit connected to the feedback adjusting devices; each feedback adjusting device comprises a current monitor and an active elevator; the current monitor is mounted between a limiting ring and a grounding ring of a plasma reaction chamber, and is connected with the calculation control unit; and the active elevator is mounted between the limiting ring and the grounding ring of the plasma reaction chamber and positioned in a position corresponding to the current monitor; and the current monitors obtain the current distribution magnitude of different areas between the limiting ring and the grounding ring so that the calculation control unit adjusts a gap between the limiting ring and the grounding ring. The processor, system and method have the advantages that real-time active feedback control of the plasma uniformity can be realized due to cooperation of the active elevators and the current monitors.

Description

technical field [0001] The invention relates to the technical field of plasma etching, in particular to a plasma processor, an etching uniformity adjustment system and a method. Background technique [0002] In the existing etching device, due to the asymmetry of the geometric structure of the components (such as the wafer transfer gate in the reaction chamber, the suction port of the vacuum pump in the middle and lower chambers of the reaction chamber, etc.), the uneven temperature of the components (such as the uneven temperature distribution on the surface of the electrostatic chuck and the focus ring etc.), and the inhomogeneity of the electrical properties of the components will cause the asymmetry of the etching process (usually also referred to as uneven etching in the industry). [0003] The asymmetry of the etching process will have a great impact on the performance and yield of the etching product, and it needs to be solved urgently. Contents of the invention ...

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Problems solved by technology

[0002] In the existing etching device, due to the asymmetry of the geometric structure of the components (such as the wafer transfer gate in the reaction chamber, the suction port of the vacuum pump in the middle and lower chambers of the reaction chamber, etc.), the uneven temperature of the components (such as the uneven temperature distribution on the surface of the electrostatic chuck and the focus ring etc.), as well as the inhomogeneity of the electrical properties of the components will cause the asymmetry of the etching process (also known as uneven etching in the industry)

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