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Read Threshold Tracking Method and Device

一种阈值、阈值电压的技术，应用在固态硬存储设备领域，能够解决无法正确体现信息、数据偏差等问题

Active Publication Date: 2021-09-28
MEMBLAZE TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because the charge amount of the memory cell is affected by various factors such as the quality, life, and time of the memory cell, and the non-uniformity of the signal transmission path from multiple memory cells to the sensitive amplifier, the readout voltage of the memory cell changes. , which leads to some deviations in the data read from the storage unit, which cannot correctly reflect the information originally written to the storage unit

Method used

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  • Read Threshold Tracking Method and Device
  • Read Threshold Tracking Method and Device
  • Read Threshold Tracking Method and Device

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Embodiment Construction

[0077] figure 2 is the distribution curve of the readout voltage of the memory cell. After the memory cell is programmed, charges are stored in the memory cell according to the programmed value. When reading memory cells, different read voltages are obtained from memory cells that store different charges. see figure 2 , the bell-shaped line L0 is the read voltage distribution of the memory cells having a “1” state, and the bell-shaped line L1 is the read voltage distribution of the memory cells having a “0” state. When the threshold voltage Vt2 is used, memory cells having a "1" state on the right side of the threshold voltage Vt2 are misread and become error bits. Similarly, when the threshold voltage Vt1 is used, memory cells having a "0" state on the left side of the threshold voltage Vt1 are misread and become error bits. The threshold voltage Vt3 is yet another optional threshold voltage for reading data from the memory cell.

[0078] By comparing the number of err...

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Abstract

A read threshold tracking method and device are provided. The disclosed method for tracking a threshold includes: using the first value of the threshold to read the first data; using the second value of the threshold to read the second data; determining the adjustment direction of the threshold according to the second data; determining the adjustment direction of the threshold according to the first data an adjustment range; and updating the threshold according to the determined adjustment direction and adjustment range of the threshold.

Description

technical field [0001] The present application relates to a solid-state hard storage device, in particular, to a method and device for tracking changes in the optimum threshold voltage for reading data from an NVM chip. Background technique [0002] Flash memory stores information by holding an amount of charge in memory cells. The amount of charge in a memory cell determines the readout voltage of the memory cell. When reading flash memory data, the read voltage of the memory cell is compared with the threshold voltage to identify the information stored in the memory cell. However, because the charge amount of the memory cell is affected by various factors such as the quality, life, and time of the memory cell, and the non-uniformity of the signal transmission path from multiple memory cells to the sensitive amplifier, the readout voltage of the memory cell changes. , resulting in some deviations in the data read from the storage unit, which cannot correctly reflect the i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/34
CPCG11C16/3404
Inventor 路向峰张一中殷雪冰
Owner MEMBLAZE TECH BEIJING