Semiconductor light emitting chip and manufacturing method thereof

Abstract

A light emitting semiconductor chip and a manufacturing method thereof are disclosed, wherein the semiconductor light emitting chip comprises a substrate and an N-type semiconductor layer, an active region, a P-type semiconductor layer, a reflective layer, at least two insulating layers, an anti-diffusion layer and an electrode group which sequentially grow from the substrate, wherein one of the insulating layers surrounds an inner side of the reflective layer, the other insulating layer surrounds an outer side of the reflective layer, and the insulating layer isolates the diffusion preventionlayer and the P-type semiconductor layer, wherein the electrode group comprises an N-type electrode and a P-type electrode, wherein the N-type electrode is electrically connected to the N-type semiconductor layer and the P-type electrode is electrically connected to the P-type semiconductor layer.

Description

technical field [0001] The invention relates to a semiconductor light emitting diode, in particular to a semiconductor light emitting chip and a manufacturing method thereof. Background technique [0002] Under normal circumstances, high-brightness flip-chips generally use metallic silver as the mirror material to form a silver mirror stacked on the P-type GaN layer, but since the work function of the P-type GaN layer is 7.5eV, and The work function of the silver mirror is 4.26eV, and theoretically only when the work function of the silver mirror is greater than the work function of the P-type GaN layer, can the silver mirror and the P-type GaN layer form a low However, in fact, because the work function of the silver mirror is smaller than that of the P-type GaN layer, the silver mirror cannot form a low-resistance ohmic contact with the P-type GaN layer. Because the metal silver that forms the silver mirror is an active metal, under the conditions of potential difference,...

AI Technical Summary

Problems solved by technology

Because the material forming the anti-diffusion layer is usually metal materials such as titanium (Ti), titanium tungsten (TiW), nickel (Ni), in actual use, the contact resistance between the anti-diffusion layer and the p-type gallium nitride layer lower than the contact resistance between the silver mirror and the p-type gallium nitride layer, which easily causes the current injected from the p-type electrode to gather in this region (the region where the anti-diffusion layer contacts the p-type gallium nitride layer) , resulting in an excessively high current density in this region, which in turn leads to abnormal electrostatic breakdown

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