Integrated Circuits and Discrete Tapered Interconnects

Abstract

The invention discloses an integrated circuit and a discrete tapered interconnection. Discrete tapered interconnects form interconnects between the first electronic circuit and the second electronic circuit within the integrated circuit. The discrete tapered interconnect includes: a first set of a plurality of parallel conductors in a first metal layer of each metal layer of a semiconductor layer stack; and a second set of a plurality of parallel conductors in the semiconductor layer In the second metal layer of each metal layer of the layer stack. The plurality of parallel conductors of the first set effectively make the discrete taper as the discrete tapered interconnect traverses between the first electronic circuit and / or the second electronic circuit The inner wire is tapered. Such tapers of the discrete tapered interconnects may be asymmetric tapers or symmetrical tapers. The plurality of parallel conductors of the second set are configured and arranged to form various interconnections between various parallel conductors of the plurality of parallel conductors of the first set.

Description

technical field [0001] Embodiments of the present invention relate to an integrated circuit (IC) process, particularly integrated circuits and discrete tapered interconnects. Background technique [0002] Continued improvements in semiconductor fabrication processes have enabled manufacturers and designers to form smaller and more powerful electronic devices. Semiconductor device fabrication has progressed from a 10 μm semiconductor fabrication process achieved around 1971 to a 22 nm semiconductor fabrication process achieved around 2012. It is expected that semiconductor device fabrication will further develop to a 5nm semiconductor fabrication process around 2019. With each advancement in semiconductor fabrication processes, components of integrated circuits have become smaller, enabling more components to be fabricated onto semiconductor substrates. However, with each advancement in semiconductor fabrication processes, new challenges have been revealed in forming integr...

AI Technical Summary

Problems solved by technology

For more advanced technology nodes (e.g. 5nm semiconductor fabrication process), the resistance and / or capacitance of the interconnects may be large and may degrade the electrical characteristics of signals propagating within the interconnects

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