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Semiconductor device and forming method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve the problems of increasing the complexity of processing and manufacturing ICs

Active Publication Date: 2019-05-21
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these advances have increased the complexity of processing and manufacturing ICs, and in order to realize these advances, similar developments in IC processing and manufacturing are required

Method used

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  • Semiconductor device and forming method thereof
  • Semiconductor device and forming method thereof
  • Semiconductor device and forming method thereof

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Embodiment Construction

[0009] The following disclosure provides many different embodiments, or examples, for implementing different features of the presented subject matter. Specific examples of components or configurations are described below to simplify the present invention. Of course, these are merely examples and not intended to be limiting. For example, in the description below, forming a first feature on or over a second feature may include embodiments in which the first feature and the second feature are formed in direct contact, and may also include embodiments in which the first feature and the second feature may be formed in direct contact. An embodiment in which the part forms an accessory part such that the first part and the second part are not in direct contact. Furthermore, the present invention may repeat reference numerals and / or letters in various instances. These repetitions are for simplicity and clarity and do not in themselves indicate a relationship between the various embo...

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Abstract

Embodiments of the present disclosure relate to a FinFET device having gate spacers with reduced capacitance and methods for forming the FinFET device. Particularly, the FinFET device according to thepresent disclosure includes gate spacers formed by two or more depositions. The gate spacers are formed by depositing first and second materials at different times of processing to reduce parasitic capacitance between gate structures and contacts introduced after epitaxy growth of source / drain regions.

Description

technical field [0001] Embodiments of the present invention relate to a semiconductor device and a method for forming the same. Background technique [0002] The semiconductor integrated circuit (IC) industry has undergone rapid development. Technological advances in IC materials and design have produced multiple generations of ICs, each with smaller and more complex circuits than the previous generation. These advances, however, have increased the complexity of processing and manufacturing ICs, and similar developments in IC processing and manufacturing are required in order to realize these advances. When scaling semiconductor devices such as Fin Field Effect Transistors (FinFETs) through various technology nodes, several strategies have been employed to improve device performance, such as using epitaxial channels to enhance carrier mobility. Contents of the invention [0003] According to some embodiments of the present invention, there is provided a method of forming...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L29/78H01L21/28
CPCH01L21/823864H01L21/823814H01L29/66795H01L29/66545H01L29/0847H01L29/4983H01L29/66553H01L29/66636H01L27/0924H01L21/823821H01L29/7851
Inventor 林文凯赖柏宇李俊德李凯璿杨世海包天一林玮耿
Owner TAIWAN SEMICON MFG CO LTD