Semiconductor device and method for manufacturing same

Abstract

Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device comprises a gate electrode on a substrate, an upper capping pattern on the gate electrode, and a lower capping pattern between the gate electrode and the upper capping pattern. The lower capping pattern comprises a first portion between the gate electrode and the upper capping pattern, and a plurality of second portions extending from the first portion onto corresponding side surfaces of the upper capping pattern. The upper capping pattern covers a topmost surface of each of the second portions.

Description

[0001] This application claims the benefit of Korean Patent Application No. 10-2017-016937 filed with the Korean Intellectual Property Office on November 29, 2017, the entire contents of which are hereby incorporated by reference. technical field [0002] The present disclosure relates to semiconductor devices, and more particularly, to semiconductor devices including field effect transistors and methods of manufacturing the same. Background technique [0003] Semiconductor devices include integrated circuits made up of metal oxide semiconductor field effect transistors (MOSFETs). As the size and design rules of semiconductor devices are gradually reduced, the size of MOSFETs is also gradually reduced. The scaling of MOSFETs degrades the operating characteristics of semiconductor devices. Accordingly, various studies are being conducted to manufacture semiconductor devices having excellent performance while overcoming limitations due to integration of semiconductor devices....

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Scaling of MOSFETs degrades operating characteristics of semiconductor devices

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