Memory, chip and circuit control method

A memory and storage unit technology, applied in the field of memory, can solve the problems of wasting memory area and not being effectively used, and achieve the effects of efficient utilization, performance loss reduction, and area ratio improvement

Active Publication Date: 2019-07-30
HYGON INFORMATION TECH CO LTD
View PDF8 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The storage unit is the basic structure of the memory, and the memory generally stores data through a storage unit array composed of multiple storage units; In addition to designing storage units, redundant storage units are generally designed, so that when the storage unit is abnormal, the redundant storage unit can be used to replace the abnormal storage unit, thereby reducing the performance loss of the memory; however, if the storage unit in the memory If there is no abnormality, the redundant storage unit will become useless. It can be seen that the redundant storage unit has not been effectively utilized in the prior art, which wastes the area of ​​the memory to a certain extent

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory, chip and circuit control method
  • Memory, chip and circuit control method
  • Memory, chip and circuit control method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0077] optional, figure 1 It shows a schematic structural diagram of a traditionally designed memory. The memory is usually arranged in a matrix structure consisting of rows and columns of memory cells, so the memory can have multiple memory cell arrays, and each memory cell array can have multiple memory cells;

[0078] refer to figure 1 , The memory is designed with bit line pairs (BL and BLB), word lines (Word Line, WL), redundant word lines (indicated by Red-WL), memory cells (indicated by Cell), redundant memory cells (Red-Cell , Red-Cell can be the abbreviation of Redundancy Cell), and sense amplifier (indicated by SA); SA is connected to the data output port (Data Output, DO);

[0079] Among them, the English spelling of BL is Bit Line, which means a bit line; the bit line pair can be composed of a logically opposite bit line BL and an inverted bit line BLB; the number of bit line pairs can be multiple pairs, and the number of word lines can be multiple The number of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The embodiment of the invention provides a memory, a chip and a circuit control method. The memory comprises word line, redundant word lines, a storage unit connected with the word lines; and a redundant storage unit connected with the redundant word lines, wherein when the abnormal storage unit does not exist, the redundant storage unit is used for realizing the sense amplifier, and when an abnormal storage unit exists, at least one redundant storage unit is reserved to realize the sense amplifier, and the abnormal storage unit is replaced by using the rest target redundant storage units. According to the embodiment of the invention, on the basis of effectively utilizing the redundant storage unit, the area ratio occupied by the storage unit in the memory is improved, and the area consumption of the memory is reduced.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of memory, and in particular to a memory, a chip, and a circuit control method. Background technique [0002] Memory is a widely used device for storing data in chips. In particular, SRAM (Static Random-Access Memory) is a typical type of memory. for wide application. [0003] The storage unit is the basic structure of the memory, and the memory generally stores data through a storage unit array composed of multiple storage units; In addition to designing storage units, redundant storage units are generally designed, so that when the storage unit is abnormal, the redundant storage unit can be used to replace the abnormal storage unit, thereby reducing the performance loss of the memory; however, if the storage unit in the memory If there is no abnormality, the redundant storage unit will become useless. It can be seen that the redundant storage unit has not been effectively utilized i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/00
CPCG11C29/785G11C29/80
Inventor 黄瑞峰杨昌楷王建龙
Owner HYGON INFORMATION TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap