Ternary memory addressing circuit, reading circuit, device and memory

Abstract

A ternary memory addressing circuit, a reading circuit, a device and a memory are provided by the invention. An optimal result of data matching is selected by adopting a PDM mode, and a large amount of unnecessary energy consumption caused by a PE module in a traditional TCAM is avoided. An X state is combined with a reference unit, so that the area consumption caused by a data length information storage unit is reduced, and the optimal matching result of the data can be quickly judged. Finally, the optimal data matching result is obtained by judging the digit of the 'X' state, so that the position of the 'X' state in data storage is not limited.

Description

technical field [0001] The invention relates to the field of semiconductors, and more specifically relates to a tri-state memory addressing circuit, a reading circuit, a device and a memory. Background technique [0002] Tri-state random access memory (TCAM: Ternary Content Addressable Memory) is a memory capable of storing three states of logic '0', logic '1' and unknown state 'X'. Widely used in router address storage, lookup table deep packet inspection (deep packet inspection), network intrusion detection / protection system, Internet of Things, wireless sensor networks (wireless sensor networks), face recognition (face recognition), vehicle license plate recognition (vehicle license plate recognition) and other occasions that require exact matching or fuzzy matching. [0003] Traditional memory only stores two data states of logic '0' and logic '1', while TCAM has the existence of 'X' state. Therefore, after TCAM matches multiple correct results, it also needs to use a ...

AI Technical Summary

Problems solved by technology

However, in addition to storing data, the PDM method also needs to store the length information of the data, resulting in additional area consumption

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