Ternary memory addressing circuit, reading circuit, device and memory

A technology for addressing circuits and reading circuits, which is applied in the fields of reading circuits, devices and memories, and tri-state memory addressing circuits, and can solve problems such as area consumption.

Active Publication Date: 2021-05-18
BEIHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in addition to storing data, the PDM method also needs to store t

Method used

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  • Ternary memory addressing circuit, reading circuit, device and memory
  • Ternary memory addressing circuit, reading circuit, device and memory
  • Ternary memory addressing circuit, reading circuit, device and memory

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Embodiment Construction

[0072] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the implementation manners in the present invention, all other implementation manners obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of the present invention.

[0073] The following disclosure provides many different embodiments or examples for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. For example, in the following description, forming a first component on or on a second component may includ...

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Abstract

A ternary memory addressing circuit, a reading circuit, a device and a memory are provided by the invention. An optimal result of data matching is selected by adopting a PDM mode, and a large amount of unnecessary energy consumption caused by a PE module in a traditional TCAM is avoided. An X state is combined with a reference unit, so that the area consumption caused by a data length information storage unit is reduced, and the optimal matching result of the data can be quickly judged. Finally, the optimal data matching result is obtained by judging the digit of the 'X' state, so that the position of the 'X' state in data storage is not limited.

Description

technical field [0001] The invention relates to the field of semiconductors, and more specifically relates to a tri-state memory addressing circuit, a reading circuit, a device and a memory. Background technique [0002] Tri-state random access memory (TCAM: Ternary Content Addressable Memory) is a memory capable of storing three states of logic '0', logic '1' and unknown state 'X'. Widely used in router address storage, lookup table deep packet inspection (deep packet inspection), network intrusion detection / protection system, Internet of Things, wireless sensor networks (wireless sensor networks), face recognition (face recognition), vehicle license plate recognition (vehicle license plate recognition) and other occasions that require exact matching or fuzzy matching. [0003] Traditional memory only stores two data states of logic '0' and logic '1', while TCAM has the existence of 'X' state. Therefore, after TCAM matches multiple correct results, it also needs to use a ...

Claims

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Application Information

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IPC IPC(8): G11C16/08G11C16/26G11C8/12G11C7/06G11C7/08
CPCG11C16/08G11C16/26G11C8/12G11C7/062G11C7/08Y02D10/00
Inventor 赵巍胜魏少芊邓尔雅康旺
Owner BEIHANG UNIV
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