Vertical microelectronic component and corresponding manufacturing method

Abstract

The invention realizes a vertical microelectronic element and a corresponding manufacturing method. The vertical microelectronic element comprises a structure of a semiconductor base (1; 1''') and a plurality of fins (1a, 1b) formed on the front side (O) of the semiconductor base (1; 1'''), the The semiconductor base has a front side (O) and a rear side (R), and the fins have respective side walls (S) and respective upper sides (T) and are separated from each other by recesses (G). Each fin (1a, 1b) comprises at least one GaN / AlGaN-heterolayer region (2a, 2b) and at least one gate interface region (G1-G4), said GaN / AlGaN-heterolayer region formed on the sidewall (S) and has an embedded channel region (K) extending essentially parallel to the sidewall (S), the gate interface region above the GaN / AlGaN-heterolayer region (2a, 2b) with the associated The channel region (K) in the recess (G) is arranged electrically insulatingly on the side wall (S). A common source interface region (SL) is arranged above the fins (1a, 1b) and is connected to respective first ends of the channel regions (K) near the upper side (T) of the fins (1a, 1b). A common drain interface region (DL) is arranged above the rear side (R) and is connected to the respective second ends of the channel region (K) near the front side (O) of the semiconductor substrate (1, 1''').

Description

technical field [0001] The invention relates to a vertical microelectronic component and a corresponding manufacturing method. Background technique [0002] HEMT-transistors (High-Electron-Mobility Transistor=Transistor mit hoherElektronenbeweglichkeit) are special structures of field-effect transistors which are especially suitable for use at high frequencies due to their low component capacitance. Starting from the structure, HEMT transistors are formed from layers of different semiconductor materials with band gaps of different sizes (so-called heterolayer structures), for which the material system GaN / AlGaN is used, for example. If the two materials are deposited on top of each other, a two-dimensional electron gas is formed on both sides of the GaN at the interface of the materials, which can be used as a conductive channel because the electron mobility is very large in it. High. [0003] Conventional HEMT transistors with the material system GaN / AlGaN are produced in...

AI Technical Summary

Problems solved by technology

This problem is particularly important for high voltage classes above 600 V, since in side elements a high compressive strength can only be achieved by increasing the distance between the gate connection and the discharge connection

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