Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Cultivation method of meconopsis in plain area

A cultivation method and a technology of Meconopsis, applied in the field of cultivation in the plain area of ​​Meconopsis, can solve the problems of damaged plants, poor adaptability of adult plants and high transportation costs, so as to reduce transportation costs and losses, have relatively strong plant adaptability, and prolong the life of the plant. The effect of display time

Active Publication Date: 2019-09-24
BEIJING BOTANICAL GARDEN
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patented technology allows meconicers to grow plants indoors without being affected or damaged during their growth process. By controllably growing them at different locations within an enclosed space called a greenhouse, they have greater flexibility than traditional ways like crop rotation. They also reduce energy consumption compared to traditional farming techniques while maintaining good quality crops. Overall, these improvements make mecrocades look better when displayed on large surfaces outside urban environments.

Problems solved by technology

This patented technical problem addressed in the patents describes how meconium (a type of vegetable called Cochinum), commonly found throughout Japan, grows naturally over several thousand times across different regions around them. However, due to these harsh environments, we cannot maintain their quality until now when new generations emerge from the original range. Additionally, current culture practices involve crossing seeds between two parental straps - green foils – yellow veil leaves, making it challenging to create consistently good root systems suitable for commercial use.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] A method for cultivating Meconopsis plain area, said method comprising the steps of:

[0029] (1) Sowing: Soak in clear water for 24 hours at room temperature before sowing, and the germination will be more uniform. The temperature is 20°C, and the temperature is 10°C during dark treatment;

[0030] (2) Transplanting: Transplant when a pair of true leaves grow out of the seedlings, and carry out transplanting and the growth of seedlings by matrix block (the 24mm matrix block produced by the Jeffy company in the Netherlands); Be careful not to damage the root system, especially the rhizome;

[0031] (3) Upper basin: When the root system in the matrix block is overgrown and stretches out, start upper basin; Described upper basin specific method is: the first step upper basin: When root system is overgrown with matrix block, plant grows to 4-6 slices When the leaves are planted, the substrate block is planted in an 8cm pot; the second step is to change the pot: when the ...

Embodiment 2

[0037] A method for cultivating Meconopsis plain area, said method comprising the steps of:

[0038] (1) Sowing: Soak in clean water for 24 hours at room temperature before sowing, the germination will be more uniform, and then sow seedlings in plug trays. After sowing, carry out 12 hours of light and 12 hours of dark treatment, and the temperature during light and dark treatment is maintained at 15- 20°C;

[0039] (2) Transplanting: Transplant when a pair of true leaves grow out of the seedlings, and carry out transplanting and the growth of seedlings by matrix block (the 24mm matrix block produced by the Jeffy company in the Netherlands); Be careful not to damage the root system, especially the rhizome;

[0040] (3) Upper basin: When the root system in the matrix block is overgrown and stretches out, start upper basin; Described upper basin specific method is: the first step upper basin: When root system is overgrown with matrix block, plant grows to 4-6 slices When the leav...

Embodiment 3

[0046] A method for cultivating Meconopsis plain area, said method comprising the steps of:

[0047] (1) Sowing: Soak in clear water for 24 hours at room temperature before sowing, and the germination will be more uniform. The temperature is 20°C, and the temperature is 10°C during dark treatment;

[0048] (2) Transplanting: Transplant when a pair of true leaves grow out of the seedlings, and carry out transplanting and the growth of seedlings by matrix block (the 24mm matrix block produced by the Jeffy company in the Netherlands); Be careful not to damage the root system, especially the rhizome;

[0049] (3) Upper basin: When the root system in the matrix block is overgrown and stretches out, start upper basin; Described upper basin specific method is: the first step upper basin: When root system is overgrown with matrix block, plant grows to 4-6 slices When the leaves are planted, the substrate block is planted in an 8cm pot; the second step is to change the pot: when the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a cultivation method of meconopsis in a plain area. By means of the method, the meconopsis blooms in the plain area through a suitable cultivation management method, the technical difficulty in cultivation and blooming of the meconopsis in the plain area is overcome, it is possible to appreciate the meconopsis in the plain area in China, the transportation cost is reduced, the display effect on plants is improved, the display time of the plants is prolonged, and the relative adaptability of the plants is high.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Owner BEIJING BOTANICAL GARDEN
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com