Static memory based on devices with hysteresis

Abstract

The invention discloses a unit circuit and an array circuit of a static memory based on devices with hysteresis characteristics. The unit circuit includes: an information storage module, a write operation module and a read operation module, wherein the information storage module is composed of devices with hysteresis characteristics to store information using the state of the hysteresis characteristics, and includes a write operation terminal and a read operation terminal, And the stored information is allowed to change without external energy input; the write operation module is connected to the write operation terminal to perform write operation on the information stored in the information storage module, and when the stored information does not change, through The continuous control of the write operation terminal prevents the stored information from changing; the read operation module is connected with the read operation terminal to read the state storage information in the information storage module. The invention has the advantages of high integration and high durability, and is a type of memory that can maintain data at low voltage, thereby greatly reducing power consumption and increasing storage density.

Description

technical field [0001] The invention relates to the technical field of low-power storage design and high-integration static storage design, in particular to a static memory based on devices with hysteresis characteristics. Background technique [0002] With the rise of artificial intelligence and big data, the amount of data processing is increasing. A large amount of data requires the support of high-performance memory. The performance of a memory is determined by factors such as its storage capacity, read / write speed, and power consumption, and any lack of performance in any of them will seriously reduce the performance of the system. [0003] SRAM (Static Random Access Memory, Static Random Access Memory) is a random access memory with a special structure. Compared with DRAM (Dynamic Random Access Memory, Dynamic Random Access Memory), SRAM does not need to refresh the circuit, as long as it saves When the power is turned on, the data stored in the SRAM will not be lost...

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Problems solved by technology

However, non-volatile memory also has many disadvantages, such as operational complexity, power consumption, delay, and device durability, etc., which limit the wide application of non-volatile memory.

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