Memory control method and device and storage medium

A control method and a technology of a control device, which are applied in the field of semiconductors and can solve problems such as programming interference

Active Publication Date: 2019-12-27
YANGTZE MEMORY TECH CO LTD
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  • Application Information

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Problems solved by technology

In the related art, when a program operation is performed on a selected memory cel...

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  • Memory control method and device and storage medium
  • Memory control method and device and storage medium
  • Memory control method and device and storage medium

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Embodiment Construction

[0034] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, the specific technical solutions of the invention will be further described in detail below in conjunction with the drawings in the embodiments of the present invention. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0035] According to different internal structures, memory can be divided into NOR type memory (English expression is NOR Flash) and NAND type memory (English expression is NAND Flash). Wherein, each storage unit under each bit line (BL, Bit Line) in the NOR type memory is connected in parallel, can realize bit reading; And each storage unit under each bit line in the NAND type memory is connected in series, can realize Realize page (English expression as page) reading. The series structure of memory cells reduces the occupied area of ​​metal wires, ...

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Abstract

The embodiment of the invention provides a memory control method and device and a storage medium. The method comprises the following steps: carrying out programming operation on the memory, wherein afirst voltage is applied to an unselected top select gate (TSG) of the memory at least in a full-on phase of a program operation, so that the unselected TSG is in an off state, and wherein the first voltage is a negative voltage. According to the embodiment of the invention, the negative voltage is applied to the unselected TSG of the memory in the specific time period of the programming operation; therefore, the voltage of the unselected TSG is ensured to be lower than the threshold voltage of the TSG in the channel boosting period of the programming operation, so that the unselected TSG is in a completely off state, and the unselected TSG is prevented from being mistakenly selected due to the coupling effect of channel boosting. In this way, programming disturbances in the memory are reduced.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a memory control method, device and storage medium. Background technique [0002] In recent years, the development of flash memory (Flash Memory in English) is particularly rapid. The main feature of flash memory (referred to as memory in the following description) is that it can keep stored information for a long time without power on, and has the advantages of high integration, fast access speed, easy erasing and rewriting, etc. Therefore, it has been widely used in many fields such as microcomputer and automatic control. In order to further increase the bit density of the memory (expressed as BitDensity in English) and reduce the bit cost of the memory (expressed as Bit Cost in English), a three-dimensional (3D, 3Dimensions) memory technology is proposed. At present, 3D memory technology has been developed rapidly. [0003] In a 3D memory, storage units (expr...

Claims

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Application Information

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IPC IPC(8): G11C16/10G11C16/08G11C16/04
CPCG11C16/0483G11C16/08G11C16/10
Inventor 吴振勇王瑜
Owner YANGTZE MEMORY TECH CO LTD
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