Supercharge Your Innovation With Domain-Expert AI Agents!

A kind of emccd multiplication gain test method

A test method and pixel technology, applied in the direction of single semiconductor device test, measuring electricity, measuring device, etc., can solve the problem that EMCCD test cannot be applied

Active Publication Date: 2021-11-23
EAST CHINA INST OF OPTOELECTRONICS INTEGRATEDDEVICE
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the prior art, the test method for CCD cannot be applied to the test of EMCCD

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of emccd multiplication gain test method
  • A kind of emccd multiplication gain test method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] like figure 1 Shown, the present invention provides a kind of EMCCD multiplying gain test method, comprises the following steps:

[0018] a. Select the EMCCD pixel to be tested, apply power and clock signals to the pixel to be tested, and test to obtain the pixel output Udark under the condition of no light; under the corresponding light condition, increase the multiplied voltage step by step to obtain the light condition Under the pixel output Vout;

[0019] Calculate the multiplication gain according to the formula MRG = (Vout-Udark) / Udark, where MRG is the multiplication gain;

[0020] Specifically, this step consists of three stages,

[0021] The first stage:

[0022] a1. Apply power and clock signals according to the DC conditions and AC timing conditions of the EMCCD working point, and select a specific pixel output from the EMCCD for the test data (for example, select the pixel of row 100 and column 100);

[0023] a2. Set the light value light1 of the first s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an EMCCD multiplication gain test method, which comprises the following steps: a. Selecting a pixel to be measured of the EMCCD, applying a power supply and a clock signal to the pixel to be measured, and testing the pixel output Udark under no-light conditions; Under the illumination conditions of 100000000000000000000000000000000000000000000-0, increase the multiplication voltage step by step, obtain the pixel output Vout under the light condition; Calculate the multiplication gain according to the formula MRG=(Vout‑Udark) / Udark, in the formula MRG is the multiplication gain; b. Calculate the white defect , dark defect and blind pixel pixels, and remove defective pixels; c. Fit the relationship between the dynode and the multiplication gain; by continuously applying the dynode voltage, record the multiplication voltage value and the calculated value of the multiplication gain at this time, and draw the multiplication gain curve Figure, can clearly show the relationship between the dynode voltage and the multiplication gain, filling the gap at home and abroad.

Description

technical field [0001] The invention relates to the technical field of photoelectric device testing, in particular to an EMCCD multiplication gain testing method. Background technique [0002] Multiplication gain is a characteristic parameter of EMCCD, which characterizes the multiplication ability of EMCCD electron multiplication register. However, how to accurately and reliably evaluate the multiplication gain of EMCCD has always been a difficult problem. There is no convincing test method for multiplication gain at home and abroad, and there are no relevant national standards and industry standards to rely on. [0003] At present, related patents on EMCCD, such as "A Method for Extracting Parameters of EMCCD's Sinusoidal Multiplication Signal" (Application No. 201410074701.X), "A Digitally Controlled High-Voltage Multiplication Circuit for EMCCD" (Application No. There is no test for EMCCD multiplication gain involved. [0004] In the prior art, the test method for CCD ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
CPCG01R31/2601
Inventor 焦贵忠孙丽丽田波秦盼卜令旗李苏苏
Owner EAST CHINA INST OF OPTOELECTRONICS INTEGRATEDDEVICE
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com