Vacuum processing apparatus and support shaft

A technology of vacuum processing device and supporting shaft, which is applied in the direction of plasma, coating, gaseous chemical plating, etc., which can solve the problems of increasing distance between electrodes and increasing deviation, and achieve the effect of preventing particles

Active Publication Date: 2020-08-28
ULVAC INC
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, since the shower plate becomes high temperature due to the heat received from the substrate and the heater, thermal deformation of the shower plate occurs due to thermal expansion and a decrease in elastic modulus, and the distance between electrodes in the surface of the shower plate may vary. will get bigger
As a result, the film quality and film thickness distribution of the film formed on the substrate may vary greatly within the substrate surface.

Method used

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  • Vacuum processing apparatus and support shaft
  • Vacuum processing apparatus and support shaft
  • Vacuum processing apparatus and support shaft

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Embodiment

[0243] Next, examples according to the present invention will be described.

[0244] In addition, specific examples in the present invention will be described.

[0245] Here, use Figure 1 to Figure 7 The shown vacuum processing apparatus performs film formation of a-Si and SiO, and measures film thickness distribution.

[0246] Various factors in the film formation at this time are shown.

[0247] · Substrate size: 1500×1850mm

[0248] ·Film forming conditions

[0249] Process gas: a-Si film formation: monosilane 1.25slm, argon 40slm

[0250] Process gas: SiO film formation: monosilane 1.4slm, nitrogen monoxide 9.5slm, in-plane density of the gas flow path in the shower plate: 20788 / m 2

[0251] show the result in Figure 11A and Figure 11B .

[0252] In addition, regarding the film thickness distribution at this time, the film thickness distribution of the amorphous silicon film is ±4.4% ( Figure 11A ), the film thickness distribution of the silicon oxide film is...

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Abstract

This vacuum processing apparatus for performing plasma treatment comprises: an electrode flange, which is connected to a high frequency power source in a chamber; a shower plate, which has a first surface facing the electrode flange and a second surface on the reverse side from the first surface, faces the electrode flange separated by a gap, and forms a cathode together with the electrode flange;a processing chamber, which faces the second surface of the shower plate and in which a substrate to be processed is disposed; and a support shaft, which is connected to the first surface of the shower plate and supports the shower plate. In the shower plate, multiple gas flow channels, which connect the space between the electrode flange and the first surface to the processing chamber and have aspecified conductance, are formed. Shaft gas flow channels extending in the axial direction of the support shaft are provided for preventing variations in the conductance in the in-plane direction ofthe shower plate, at the portion where the support shaft is connected to the shower plate.

Description

technical field [0001] The present invention relates to a vacuum processing device and a support shaft, and particularly relates to a technology suitable for use in supporting a shower electrode plate during plasma processing. [0002] This application claims priority based on Patent Application No. 2018-117043 filed in Japan on June 20, 2018, and the content thereof is cited here. Background technique [0003] As one of the discharge methods used in the film formation process or the etching process, there is a method using capacitively coupled plasma (CCP). For example, in a CVD (Chemical Vapor Deposition, chemical vapor deposition) apparatus using this system, a cathode and an anode are arranged facing each other, a substrate is arranged on the anode, and electric power is supplied to the cathode. And, by generating capacitively coupled plasma between the cathode and the anode, a film is formed on the substrate. In addition, in order to uniformly supply the discharge gas...

Claims

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Application Information

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IPC IPC(8): C23C16/455H01L21/205H01L21/31H05H1/46
CPCH05H1/46H01L21/31H01J37/3244H01J37/32082C23C16/45565C23C16/5096C23C16/509H01J2237/3321
Inventor山本良明神保洋介宮谷武尚江藤谦次阿部洋一
OwnerULVAC INC