Manufacturing method of semiconductor device

Abstract

The invention provides a manufacturing method of a semiconductor device. An upper layer of a side wall material layer is converted into an ion damage layer through ion implantation; the ion implantation dose at the vertex angle of the step during ion implantation is lower than that at other plane positions; at least part of the ion damage layer is removed by a wet method, a relatively thick side wall material layer can be reserved on the vertex angle of the step; after the residual side wall material layer is subjected to dry etching, the top of the side wall formed on the side wall of the step has the required height, and the bottom of the side wall has the maximum width extending along the surface of the semiconductor substrate, so that the depth-width ratio of the formed side wall is reduced. And the depth-width ratio of the formed side wall is slower, so that the etching removal of the redundant film layer formed at the step in the subsequent process is facilitated, the problem ofetching residue formed on the side wall of the step in the subsequent process is avoided, and the phenomenon of short circuit failure of the device caused by the etching residue is further improved.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a manufacturing method of a semiconductor device. Background technique [0002] With the increasing demand for miniaturization and integration of devices, special structures such as resistors and temperature sensors will be integrated in a chip, and polysilicon or metals (such as tungsten or Aluminum, etc.) or other materials such as silicon nitride, and patterned to form a step, due to the existence of the step, a thicker film layer will be deposited at the step position in the subsequent process, resulting in insufficient etching at the step position, resulting in etching residue. Specifically, such as figure 1 As shown, a film layer is formed on the surface of the substrate 100, and the film layer is further patterned to form patterned structures 101, and these patterned structures 101 form steps due to protruding from the surface of the substrate. D...

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