c, al double element injection method for preparing low-friction fluorosilicone rubber surface
A fluorosilicone rubber and low-friction technology, which is applied in the field of polymer surface modification, can solve problems such as low mechanical strength and complicated reinforcement process, and achieve the effects of improved mechanical strength, strong controllability, and simple operation
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Embodiment 1
[0021] (1) Grind the FVMQ with fine sandpaper to remove surface pollutants and obtain a smooth sample, then place it in soapy water at 45 °C with a small brush for further cleaning; then put it into deionized water heated to about 80 °C for ultrasonic cleaning for 8 minutes, Repeat 5 times to remove residual soap and pollutants on the surface; after cleaning, put FVMQ in an oven, dry at 85 °C for 30 min, and cool to room temperature for later use;
[0022] (2) Put the processed FVMQ into the vacuum chamber, and evacuate to 1×10 -4 Pa (C target and Al target are pre-installed in the vacuum chamber as ion implantation materials);
[0023] (3) Turn on the arc power supply, adjust the C target current to 43 A, the duty cycle to 40%, and generate a beam current density of 0.43 A / 100 cm 2 s; control accelerating voltage -25 kV, rated current 90A, frequency 3 kHz, using Mevva-5 Ru vacuum arc ion source to inject C for 230s;
[0024] (4) Turn off the C target and open the Al target...
Embodiment 2
[0028] (1) Cleaning of FVMQ: same as Example 1;
[0029] (2) Put the processed FVMQ into the vacuum chamber, and evacuate to 1×10 -4 Pa (C target and Al target are pre-installed in the vacuum chamber as ion implantation materials);
[0030] (3) Turn on the arc power supply, adjust the C target current to 35 A, the duty cycle to 40%, and generate a beam current density of 0.35 A / 100cm 2 s; control accelerating voltage -25 kV, rated current 90 A, frequency 5 kHz, and inject C with Mevva-5 Ru vacuum arc ion source for 300 s;
[0031] (4) Turn off the C target and open the Al target at the same time, adjust the Al target current to 35 A, the duty cycle to 60%, and generate a beam current density of 0.35 A / 100cm 2 s;
[0032] (5) Keep the accelerating voltage -25 kV, rated current 90 A, frequency 5 kHz, use Mevva-5·Ru vacuum arc ion source to inject Al for 360 s, and take it out after the cavity is cooled to obtain the modified FVMQ;
[0033] (6) The friction performance of t...
Embodiment 3
[0035] (1) cleaning treatment FVMQ is the same as embodiment 1;
[0036] (2) Put the processed FVMQ into the vacuum chamber, and evacuate to 1×10 -4 Pa (C target and Al target are pre-installed in the vacuum chamber as ion implantation materials);
[0037] (3) Turn on the arc power supply, adjust the C target current to 50 A, the duty cycle to 40%, and generate a beam current density of 0.50 A / 100cm 2 s; control accelerating voltage -25 kV, rated current 90 A, frequency 1 kHz, inject C with Mevva-5 Ru vacuum arc ion source for 100 s;
[0038] (4) Turn off the C target and open the Al target at the same time, adjust the Al target current to 50 A, the duty cycle to 60%, and generate a beam current density of 0.50A / 100cm 2 s;
[0039] (5) Keeping the accelerating voltage at -25 kV, rated current at 90 A, and frequency at 1 kHz, Al was implanted with Mevva-5 Ru vacuum arc ion source for 120 s; after the cavity was cooled, it was taken out to obtain modified FVMQ;
[0040] (6)...
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