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Method and related memory device and system for adjusting memory device refresh operation based on memory device temperature

A technology of memory and memory bank, applied in the field of related memory devices and systems

Active Publication Date: 2022-03-25
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Repeated access of a particular row may be referred to as a "hammering" event, and hammering of a row may cause problems such as migration across e.g. pass gates

Method used

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  • Method and related memory device and system for adjusting memory device refresh operation based on memory device temperature
  • Method and related memory device and system for adjusting memory device refresh operation based on memory device temperature
  • Method and related memory device and system for adjusting memory device refresh operation based on memory device temperature

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Embodiment Construction

[0039] As memory density increases, so does the amount of power required to perform automatic refresh (also referred to herein as "normal refresh") and / or row hammer refresh (RHR) on memory devices. Various embodiments of the present disclosure relate to adjusting the automatic refresh rate of a memory device. More specifically, in some embodiments, the automatic refresh rate of one or more memory banks of the memory device may be independently adjusted based on the operating temperature of the memory device. Alternatively or additionally, according to some embodiments, the automatic refresh skip rate for one or more memory banks may be adjusted. For example, the automatic refresh skip rate of the memory bank may be adjusted based on the operating temperature of the memory bank and / or the automatic refresh rate of the memory bank.

[0040] Additionally, various embodiments of the present disclosure relate to adjusting the row hammer refresh rate (also referred to herein as th...

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Abstract

Methods and related memory devices and systems for adjusting memory device refresh operations based on memory device temperature are disclosed. A method may include determining an operating temperature of a memory bank of a memory device. The method may also include adjusting at least one refresh interval of the memory bank based on the operating temperature of the memory bank. Additionally, the method may include skipping at least one refresh of the memory bank based on at least one of the operating temperature of the memory bank and a number of valid signals received at the memory bank.

Description

[0001] priority claim [0002] This application claims the application for "Methods for Adjusting Memory Device Refresh Operations Based On Memory Device Temperature, and Related Memory Devices and Systems)" of the filing date of US Patent Application Serial No. 16 / 567,155, which is a continuation-in-part of pending US Patent Application Serial No. 16 / 450,198, filed June 24, 2019, The disclosures of each of said US patent applications are hereby incorporated by this reference in their entirety. technical field [0003] Embodiments of the present disclosure relate to adjusting one or more operating rates of a memory device based on the memory device temperature, and more particularly, based on the operating temperature of the memory device and / or the number of activations associated with the memory device ("Activation Count"). ) to adjust the refresh interval, auto refresh rate and / or row hammer refresh steal rate of the memory device. Still more particularly, some embodimen...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/406
CPCG11C11/406
Inventor 何源伊藤丰
Owner MICRON TECH INC