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Voltage dump circuit applied to voltage sampling of multiple batteries

A voltage sampling and dump circuit technology, applied in battery circuit devices, arrangement of multiple synchronous batteries, charge equalization circuits, etc., can solve problems such as unfavorable circuit integration, complex circuit structure, and narrow input voltage range.

Active Publication Date: 2021-07-06
BEIJING MXTRONICS CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The traditional voltage dump circuit is realized by high-voltage technology, the differential mode input voltage is easily limited by the threshold voltage of the PMOS transistor, the input voltage range is narrow, and the circuit structure is relatively complicated, which is not conducive to the further integration of the circuit

Method used

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  • Voltage dump circuit applied to voltage sampling of multiple batteries
  • Voltage dump circuit applied to voltage sampling of multiple batteries

Examples

Experimental program
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Embodiment Construction

[0019] figure 1 It is a schematic diagram of a voltage dump circuit, including a voltage dump sampling control circuit and a voltage dump switch circuit. When the input voltage VI+ and VI- are applied to the circuit and stabilized, if VI+ is greater than VI-, the voltage at point A V A Due to the clamping of PMOS transistor P4, the gate-source voltage is higher than VI-, if VI+ is less than VI-, V A It is a gate-source voltage higher than VI+. Assuming that VI is the minimum value of VI+ and VI-, the gate-source voltage of PMOS transistor P4 is V GSP4 , then there are:

[0020] V A =VI+V GSP4

[0021] In steady state, V A A gate-source voltage is lowered through the NMOS transistor N4 to obtain V B , depending on the clamping mechanism of the diode, V B A diode turn-on voltage drop V is reduced by Zener diode D1 D , thus obtaining the dump control voltage V C , assuming that the gate-source voltage of NMOS transistor N4 is V GSN4 , then there are:

[0022] V C =V...

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Abstract

The invention provides a voltage dump circuit applied to voltage sampling of multiple batteries. According to the voltage dump circuit, by adopting the voltage clamping principle during steady-state work of an MOS tube, the voltages of the positive ends and the negative ends of batteries are sampled, then a charge pump is used for controlling a dump switch while according to the charge balance principle of the two ends of a capacitor, the sampled high voltage is converted into low voltage to be transmitted to a post-stage circuit so as to realize voltage signal processing. According to the invention, the voltage of single batteries in a series battery pack can be sampled one by one from top to bottom, the voltage of any single battery in the series battery pack can also be sampled, and the circuit is not limited by the number of series batteries in the bearable power supply range; and the circuit is simple in structure, good in BCD process compatibility and suitable for a voltage acquisition circuit of a plurality of batteries connected in series.

Description

technical field [0001] The invention relates to a voltage dump circuit, which is characterized in that it can realize the collection of voltages of multiple batteries in series, the input voltage of differential mode does not exceed 5V, the input voltage of common mode does not exceed the maximum working voltage of the circuit, and the voltage is not limited by the number of batteries connected in series dump circuit. Background technique [0002] The voltage dump circuit is an important part of the high-voltage sampling circuit, and is often used in battery management chips for voltage sampling of multiple batteries connected in series. In the voltage dump circuit, the voltage dump sampling control circuit is mainly used to clamp the common-mode input voltage corresponding to the position of different series battery packs, realize the sampling of the battery voltage, and generate the dump control signal through the boost principle of the charge pump , the dump control sign...

Claims

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Application Information

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IPC IPC(8): H02J7/00G01R31/396G01R31/385G01R19/00
CPCH02J7/0019G01R31/396G01R31/385G01R19/0084
Inventor 莫艳图田岭王宗民孔瀛柏晓鹤胡文瑞李阳
Owner BEIJING MXTRONICS CORP