SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device with protection structure
A technology for protecting structures and devices, applied in the field of semiconductors, can solve problems such as large power consumption, rapid temperature rise, damage to devices and circuits, and achieve the effect of protecting devices and circuits
Pending Publication Date: 2021-01-15
安徽芯塔电子科技有限公司
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Problems solved by technology
However, in some cases, such as when a short-circuit fault occurs in the circuit, the MOSFET is subjected to high voltage and short-circuit current at this time, and the power consumption is very large, resulting in a very fast temperature rise. It is easy to make the junction temperature exceed the maximum junction temperature or even exceed the melting point of the metal or semiconductor material. melting point, resulting in damage to devices and circuits
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[0023] The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0024] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, ...
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Abstract
The invention relates to the technical field of semiconductors and particularly relates to a SiC MOSFET device with a protection structure. The structure sequentially comprises a terminal region, a scribing groove region, a p+ main ring, a gate runway and a source runway on the p+ main ring, an active region formed by connecting a plurality of primitive cell structures in parallel, and pressing block metal of a source and a gate on the active region from the edge to the center, wherein two Schottky diode structures which are reversely connected in series are integrated between the gate runwayand the source runway to serve as a protection structure of the device. By integrating the temperature protection structure on the chip, when the junction temperature of the device exceeds a certain temperature, the protection structure can be triggered, a gate-source voltage of the device is reduced or even short-circuited, and the device is turned off, so that the device and a circuit are protected.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a SiC MOSFET device with a protective structure. Background technique [0002] Compared with Si, the wide bandgap semiconductor material SiC has about 3 times the bandgap width, 10 times the critical breakdown electric field strength, and 3 times the thermal conductivity. Therefore, SiC devices have the advantages of higher withstand voltage, higher operating frequency and higher high temperature resistance compared with Si devices. Both theory and practice have confirmed that SiC MOSFET has a switching frequency of more than 10 and better switching efficiency than Si-based IGBT, so SiC devices will have a very large application field and market. [0003] Although the theoretical maximum junction temperature of a general SiC device can reach more than 600°C, in SiC MOSFETs, the maximum junction temperature is limited due to the existence of a MOS gate structure. When the...
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IPC IPC(8): H01L27/02
CPCH01L27/0255H01L27/0211
Inventor 倪炜江
Owner 安徽芯塔电子科技有限公司