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Overlay precision detection method and detection structure

A technology of overlay accuracy and detection structure, applied in semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., can solve the problems of low detection accuracy and unstable measurement results, and achieve the effect of eliminating errors

Active Publication Date: 2021-08-13
SEMICON MFG ELECTRONICS (SHAOXING) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a detection method for overlay accuracy to solve the problems of unstable measurement results and low detection accuracy in existing detection methods

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  • Overlay precision detection method and detection structure
  • Overlay precision detection method and detection structure
  • Overlay precision detection method and detection structure

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Embodiment Construction

[0025] The following combination Figure 2-Figure 4 The detection method of the overlay precision that the present invention proposes is described in further detail with specific embodiment, wherein figure 2 It is a schematic distribution diagram of the detection structure of the overlay accuracy in an embodiment of the present invention, image 3 It is a structural schematic diagram of an overlay precision detection structure in an embodiment of the present invention, Figure 4 It is a schematic cross-sectional view of the detection structure of the overlay accuracy in the X direction in an embodiment of the present invention. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention. It should be appreciated tha...

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Abstract

The invention provides an overlay precision detection method and detection structure. According to the detection method, the thickness of a second film layer and the inclination angle of the inclined side wall of the second film layer are measured to obtain the in-layer offset of the second film layer, so that errors caused by the in-layer offset of the second film layer can be eliminated on the basis of obtaining the initial distance between two opposite test groups, and thus more accurate overlay precision can be obtained.

Description

technical field [0001] The invention relates to the field of semiconductor technology manufacturing, in particular to an overlay precision detection method and a detection structure thereof. Background technique [0002] In the semiconductor manufacturing process, the photolithography process has been gradually developed as the core technology of each technology generation. Among them, dozens of lithography steps are usually required, and the factors affecting the lithography process error are not only the resolution of the lithography machine, but also the accuracy of alignment. By ensuring the alignment accuracy of each photolithography process, the alignment between the current layer and the previous layer within a certain range can be improved, that is, the overlay accuracy (overlay, OVL). Since the manufacture of semiconductor integrated circuits is formed by superimposing multi-layer films, if there is a large alignment deviation between the first layer and the previo...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66
CPCH01L22/12H01L22/20H01L22/30
Inventor 张弓玉帛袁立春
Owner SEMICON MFG ELECTRONICS (SHAOXING) CORP