Ready-to-use LD (laser diode) pumping structure in high and low temperature environments and Q-switched laser
A high-low temperature, laser technology, applied in the field of lasers, can solve the problems of unsatisfactory, unachievable long absorption optical path of side pumping, low VCSEL pumping power density, etc., and achieve the effect of wide temperature gain insensitivity
Active Publication Date: 2021-10-22
CHANGCHUN UNIV OF SCI & TECH
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Problems solved by technology
[0002] Since the LD emission spectrum will have a wavelength shift of 3nm with a temperature change of 10°C, the wavelength shift can reach 30nm in a wide range of 100°C, which will far exceed the absorption spectrum width of the laser working substance, so that the laser working substance absorbs the pump light The efficiency is reduced, so that the output efficiency of the laser drops sharply
In response to this phenomenon, the conventional method is to control the temperature of the LD so that the LD light-emitting area is always located at the absorption peak of the crystal, but it still cannot meet the needs of instant use in high and low temperature environments.
[0003] At present, the purpose of achieving temperature-free control is mainly multi-wavelength pumping, long absorption path and VCSEL pumping scheme. Among them, multi-wavelength pumping efficiency is low, high-power pumping cannot achieve long absorption path of side pumping, and VCSEL The pump power density is too low, these solutions are not ideal, and cannot meet the needs of practical applications
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[0030] Hereinafter, exemplary embodiments of embodiments of the present disclosure will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement them. Also, for clarity, parts not related to describing the exemplary embodiments are omitted in the drawings.
[0031] In the embodiments of the present disclosure, it should be understood that terms such as "comprising" or "having" are intended to indicate the presence of features, numbers, steps, acts, components, parts or combinations thereof disclosed in this specification, and are not intended to The possibility that one or more other features, numbers, steps, acts, parts, parts or combinations thereof exist or be added is excluded.
[0032] In addition, it should be noted that, in the case of no conflict, the embodiments in the present disclosure and the features in the embodiments can be combined with each other. Embodiments of the present disclosure will be des...
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Abstract
The invention discloses a ready-to-use LD pumping structure in high and low temperature environments and a Q-switched laser. The LD pumping structure comprises a condenser, a laser gain medium, a focusing coupling mirror group and an LD pumping array. The periphery of the condenser is plated with a high reflective film, and the condenser is provided with a light passing area. The laser gain medium is positioned in the center of the condenser. The focusing coupling mirror group is positioned below the condenser and faces the light passing area of the condenser. The LD pumping array is located below the focusing coupling mirror group, so that pumping light emitted by the LD pumping array sequentially penetrates through the focusing coupling mirror group and the light passing area to be incident into the condenser to pump the laser gain medium, and sufficient population inversion of the laser gain medium is achieved.
Description
technical field [0001] The invention relates to the technical field of lasers, in particular to a ready-to-use LD pumping structure and a Q-switched laser in a high and low temperature environment. Background technique [0002] Since the LD emission spectrum will have a wavelength shift of 3nm with a temperature change of 10°C, the wavelength shift can reach 30nm in a wide range of 100°C, which will far exceed the absorption spectrum width of the laser working substance, so that the laser working substance absorbs the pump light The efficiency is reduced, making the output efficiency of the laser drop sharply. In response to this phenomenon, the conventional method is to control the temperature of the LD so that the LD light-emitting area is always located at the absorption peak of the crystal, but it still cannot meet the needs of instant use in high and low temperature environments. [0003] At present, the purpose of achieving temperature-free control is mainly multi-wav...
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IPC IPC(8): H01S3/0941H01S3/102H01S3/11H01S3/115
CPCH01S3/0941H01S3/1022H01S3/11H01S3/115
Inventor 于永吉王超毛洁金光勇王宇恒王子健
Owner CHANGCHUN UNIV OF SCI & TECH