Preparation method of heterogeneous single crystal film for acoustic filter

A single crystal film and filter technology, applied in piezoelectric/electrostrictive/magnetostrictive devices, impedance networks, electrical components, etc., can solve the problem of low film quality and easy change of piezoelectric single crystal film material composition and other problems to achieve the effect of improving the bonding strength and increasing the bandwidth used

Pending Publication Date: 2021-12-07
SHANGHAI NOVEL SI INTEGRATION TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] What the present invention aims to solve is the technical problem that the composition of the piezoelectric single crystal thin film material is easily changed by using the preparation method of the prior art, resulting in low film quality.

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  • Preparation method of heterogeneous single crystal film for acoustic filter
  • Preparation method of heterogeneous single crystal film for acoustic filter
  • Preparation method of heterogeneous single crystal film for acoustic filter

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Embodiment Construction

[0046] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Apparently, the described embodiments are only some of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application.

[0047] Reference herein to "one embodiment" or "an embodiment" refers to a specific feature, structure or characteristic that may be included in at least one implementation of the present application. In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "top", "bottom" etc. is based on the orientation or positional relationship shown in the drawings, and is only for It ...

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Abstract

The invention relates to the technical field of acoustic filters, in particular to a preparation method of a heterogeneous single crystal film for an acoustic filter. The preparation method of the heterogeneous single crystal thin film comprises the following steps: providing a heterogeneous thin film structure, wherein the heterogeneous film structure comprises a piezoelectric film, and carrying out post-annealing treatment on the heterogeneous thin film structure, wherein the post-annealing temperature ranges from 300 DEG C to 800 DEG C, and the post-annealing atmosphere contains an element material corresponding to the piezoelectric film. Therefore, the bonding strength can be improved, lattice defects can be recovered, meanwhile, the problem of external release of lithium elements, oxygen elements and the like in the piezoelectric film can be effectively solved, and the quality of the heterogeneous single crystal film is improved.

Description

technical field [0001] The invention relates to the technical field of acoustic filters, in particular to a method for preparing a heterogeneous single crystal thin film used for an acoustic filter. Background technique [0002] With the advent of the 5G era, the frequency in the communication system has been increased, the bandwidth has been expanded, and the requirements for related high-performance filters have also put forward higher requirements for materials. In recent years, the rise of piezoelectric thin films has enabled related optical and acoustic devices to greatly reduce the size of devices, improve work efficiency, and realize novel work modes. [0003] Currently, the integration of piezoelectric materials with silicon will provide wafer substrates for material-level integration, providing a material platform for fabricating monolithically integrated modules. In addition, bonding piezoelectric materials to heterogeneous substrates, especially rigid substrates,...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/253H01L41/312H03H3/02H10N30/04H10N30/072
CPCH03H3/02H03H2003/023H10N30/04H10N30/072
Inventor 欧欣李忠旭黄凯
Owner SHANGHAI NOVEL SI INTEGRATION TECH CO LTD
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