Grid circuit for driving insulated gate bipolar transistor inverter

Abstract

This paper discloses a circuit for driving the gate of an IGBT (Insulated Gate Bipolar Transistor) inverter. The circuit of the present invention comprises: a first IGBT, whose collector is connected to a DC voltage source; a second IGBT, whose collector is connected to the emitter of the first IGBT, wherein, from the collector of the second IGBT to the emitter of the first IGBT The connection point between the poles outputs an output signal, and the emitter of the second IGBT is connected to the ground; the first and second drive circuits are used to provide a DC drive voltage through the first and second gate resistors, respectively. to the gates and emitters of the first and IGBTs; the first and second noise blocking circuits are respectively connected between the gate-emitters of the first and second IGBTs and the first and second drive circuits, through The equivalent capacitance between the gate-emitters of the first and second IGBTs discharges the noise to block the noise. Therefore, the present invention can solve problems such as selection of a driving circuit, selection of a burnout driving resistance, and limitation of a gate driving distance. Also, the present invention can improve the reliability of the circuit.

Description

technical field [0001] The present invention relates to a circuit for driving the gate (gate) of an insulated gate bipolar transistor (insulated gate bipolar transistor, hereinafter abbreviated as IGBT) inverter, more specifically, relates to a single IGBT inverter A power gate drive circuit capable of driving the gate over long distances by eliminating noise generated when the gate is driven over long distances. Background technique [0002] figure 1 Indicates the equivalent circuit of a general-purpose IGBT device. In the single-supply driving method, a positive voltage or zero voltage is applied to the IGBT inverter. However, in the dual power supply driving method, positive voltage or zero voltage, or negative voltage is applied to the IGBT device. [0003] In the single power supply driving method, when a DC voltage is applied across the gate and the emitter, the collector and the emitter are electrically connected to each other. When zero voltage is applied between...

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Problems solved by technology

Therefore, noise is generated from the driving signal of the first IGBT 11 in a short time while the charge charged in the equivalent capacitance Cge between the gate and the emitter is discharged to the ground GND

[0021] As described above, according to the prior art IGBT inverter, when the noise generated from the driving signal of the first or second IGBT gate exceeds the threshold voltage, both the first and second IGBT are turned 'on' , so that the DC voltage and ground are shorted to each other

Therefore, a large current flows between them, which causes damage to each IGBT

[0022] Unfortunately, IGBT inverters according to the prior art have difficulties in minimizing the gate drive distance so that the noise does not exceed the threshold voltage, and in selecting the gate drive resistor and drive circuit, etc.

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