Vanadium oxide film micro photo-switch and its making method
A vanadium oxide thin film and optical switch technology, applied in the field of optical switches, can solve the problems of shortening the switching time, increasing the thermal capacity of optical switches, and the difficulty of optical switches, achieving low power consumption, reducing thermal capacity, and improving reliability sexual effect
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example 1
[0027] A high-speed miniature optical switch based on vanadium oxide thin film was designed by using the above scheme. The optical switch adopts a thin-film micro-bridge structure and has a small heat capacity. In the design, in order to increase the switching speed of the optical switch, the bridge deck, bridge legs and passivation layer are all made of SiC film with high thermal conductivity. Its thermal conductivity is 5W / cm.K at room temperature, which is Si 3 N 4 More than 100 times that of thin film (0.03-0.045W / cm.K). In this solution, in order to control the heat capacity value of the optical switch, no anti-reflection coating layer is made.
[0028] Pier size
Φ4μm
pier height
1.5μm
[0029] Pier material (thermal conductivity)
Deck size
Leg size
Bridge Deck Membrane
Vanadium oxide film
passivation layer
heating electrode
Al(1.2W / cm.K)
30×30μm 2
6×11×0.5μm 3
300nm SiC
100...
example 2
[0040] In the design of scheme 1, both the support layer film and the passivation layer are made of SiC film with high thermal conductivity, and the use of this high thermal conductivity material is beneficial to improve the switching speed of the optical switch. However, the power consumption of the optical switch is related to the thermal conductance of the optical switch. The larger the thermal conductance, the greater the power consumption of the optical switch. Therefore, in the case of strictly controlling the power consumption of the optical switch array, the solution 1 is not suitable. So Option 2 was designed. In the design of Scheme 2, a composite low-stress film composed of silicon oxide and silicon nitride is selected as the bridge deck support layer for the film support layer, and a silicon nitride film is also selected for the passivation layer. Compared with silicon carbide, the thermal conductivity of silicon oxide and silicon nitride is very small, which is co...
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