Vanadium oxide film micro photo-switch and its making method

A vanadium oxide thin film and optical switch technology, applied in the field of optical switches, can solve the problems of shortening the switching time, increasing the thermal capacity of optical switches, and the difficulty of optical switches, achieving low power consumption, reducing thermal capacity, and improving reliability sexual effect

Inactive Publication Date: 2007-01-17
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The optical switch based on SOA also has many advantages, such as short switching time and no insertion loss, but its polarization sensitivity problem has not been effectively solved, and there is still a long distance from practical application.
In this type of optical switch, since the vanadium oxide film is directly fabricated on the substrate, when the vanadium oxide film is heated, the part of the substrate adjacent to the vanadium oxide film is also heated together, so that The thermal capacity of the optical switch is increased, and the thermal response time of the optical switch is limited. Therefore, it is difficult to further shorten the switching time and achieve a fast switching response for the optical switch with this structure.

Method used

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  • Vanadium oxide film micro photo-switch and its making method
  • Vanadium oxide film micro photo-switch and its making method
  • Vanadium oxide film micro photo-switch and its making method

Examples

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Effect test

example 1

[0027] A high-speed miniature optical switch based on vanadium oxide thin film was designed by using the above scheme. The optical switch adopts a thin-film micro-bridge structure and has a small heat capacity. In the design, in order to increase the switching speed of the optical switch, the bridge deck, bridge legs and passivation layer are all made of SiC film with high thermal conductivity. Its thermal conductivity is 5W / cm.K at room temperature, which is Si 3 N 4 More than 100 times that of thin film (0.03-0.045W / cm.K). In this solution, in order to control the heat capacity value of the optical switch, no anti-reflection coating layer is made.

[0028] Pier size

Φ4μm

pier height

1.5μm

[0029] Pier material (thermal conductivity)

Deck size

Leg size

Bridge Deck Membrane

Vanadium oxide film

passivation layer

heating electrode

Al(1.2W / cm.K)

30×30μm 2

6×11×0.5μm 3

300nm SiC

100...

example 2

[0040] In the design of scheme 1, both the support layer film and the passivation layer are made of SiC film with high thermal conductivity, and the use of this high thermal conductivity material is beneficial to improve the switching speed of the optical switch. However, the power consumption of the optical switch is related to the thermal conductance of the optical switch. The larger the thermal conductance, the greater the power consumption of the optical switch. Therefore, in the case of strictly controlling the power consumption of the optical switch array, the solution 1 is not suitable. So Option 2 was designed. In the design of Scheme 2, a composite low-stress film composed of silicon oxide and silicon nitride is selected as the bridge deck support layer for the film support layer, and a silicon nitride film is also selected for the passivation layer. Compared with silicon carbide, the thermal conductivity of silicon oxide and silicon nitride is very small, which is co...

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Abstract

A vanadium oxide film micro optical switch and its manufacturing method. The bridge leg and the bridge surface of optical switch have the same medium film and they are on the same plate, one end of bridge leg is connecting to the bridge surface and the other on the metal bridge pier, the bridge surface is above the substrate supported by the bridge leg and bridge pier and between the bridge surface and substrate is cavity. The vanadium oxide film is made on the bridge surface, the electric pole is on the metal bridge pier and connecting to the film. The invention uses micro bridge structure, which can decrease the value of heat capacity of the optical switch, increase its speed, as well as adjust the value of heat conduction between the switch and substrate further more by change the parameter of the micro bridge structure. The invention is solid instrument, eliminating the moving part of MOMES optical switch and increasing its reliability.

Description

technical field [0001] The field of the invention belongs to the technical field of optical switches, and in particular relates to a vanadium oxide thin film miniature optical switch and a manufacturing method thereof. Background technique [0002] Optical switches are the core devices in the field of optical communication. The traditional mechanical optical switches currently on the market have the disadvantages of long switching time, large size, and inability to form large-scale arrays, which cannot meet the growing optical communication technology and market demand. The optical switches that are currently being researched are mainly focused on five aspects, namely micro-opto-electromechanical (MOMES) optical switches, liquid crystal optical switches, waveguide optical switches, bubble or bubble-driven optical switches, and semiconductor optical amplifier (SOA) optical switches. The MOMES optical switch is a miniaturization of the traditional mechanical optical switch. Th...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): G02F1/01G03F7/20H01L21/00
Inventor陈四海王宏臣黄光何少伟付小朝易新建马宏
OwnerHUAZHONG UNIV OF SCI & TECH