Method of lowering residual fluorind in sedimentation reaction chamber cavity body

Abstract

A process for decreasing the residual fluorine in depositing reaction cavity includes such steps as providing a depositing reactor which is composed of depositing reaction cavity, far-end plasma generator and RF power generator, introducing F-contained gas to said plasma generator for generating F-contained plasma, guiding it into depositing reaction cavity, introducing H2-contained gas to said plasma generator for generating hydrogen-contained plasma guiding it into depositing reaction cavity, and turning on RF power generator.

Description

[0001] The technical field to which the invention belongs [0002] The invention relates to a method for cleaning residues in a deposition reaction chamber, in particular to a method for using a radio frequency power generator and a remote plasma generator to generate hydrogen-containing Gas plasma to remove residual fluoride ions. Background technique [0003] In the step of forming the structural layer on the substrate, chemical vapor deposition (chemical vapor deposition, CVD) is a method that is often used. After the substrate is subjected to a deposition reaction, the structural layer will be formed on the surface of the substrate, and the deposition The speed will increase with the temperature in the deposition reaction chamber, and the thickness of the structure will increase with the deposition time. However, since the temperature of the chamber surface of the deposition chamber increases with the temperature in the deposition chamber, a structure layer is also deposi...

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Problems solved by technology

[0012] Because at present, a radio frequency power generator is used to dissociate hydrogen as a reaction gas to form a hydrogen ion plasma, which is filled in the deposition reaction chamber cavity 101, so that the hydrogen ion plasma is fully combined with the fluorine ion to reduce the residual fluorine ion In the cavity, however, the fluorine-containing gas used as the cleaning gas is formed into plasma by a remote plasma generator, and the plasma is introduced into the deposition reaction chamber cavity 101 through the hollow pipeline 105 to use high-efficiency plasma to clean the deposition In the steps of the reaction chamber cavity 101, fluorine ions also exist on the surface of the pipeline in the hollow pipeline 105, but they cannot be removed by the hydrogen ion plasma formed by the radio frequency power generator, resulting in residual fluoride ions in the hollow pipeline 105 In this way, it will pollute the subsequent process. In addition to affecting the process conditions and reducing the process stability, it may also drop from the deposition reaction chamber on the substrate and cause irreparable defects, such as gate line short circuit

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