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Manufacture of memory unit of discontinuous nitride ROM

A technology of read-only memory and storage unit, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc. It can solve the problem that implants and bits are not easy to be formed in the correct position that can be replaced, and the performance of NROM is reduced. question

Inactive Publication Date: 2003-11-05
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In addition, general NROM memory cells are manufactured by several steps of photolithography, and the implants and bits are not easy to be formed in the correct positions that can be replaced, resulting in greatly reduced performance of NROM

Method used

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  • Manufacture of memory unit of discontinuous nitride ROM
  • Manufacture of memory unit of discontinuous nitride ROM
  • Manufacture of memory unit of discontinuous nitride ROM

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Experimental program
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Embodiment Construction

[0024] The present invention particularly provides a method for manufacturing a discrete nitride read-only memory (nitride programmable read-only memory, NROM) memory cell (cell) by a self-aligned process. Although the present invention uses the first embodiment and the second embodiment to illustrate the manufacturing method of the NROM storage unit, however, those skilled in the art understand that the technology of the present invention is not limited thereto. In order to understand the technology of the present invention more clearly, the commonly used elements associated with the present invention will not be repeated here.

[0025] Figure 2A-Figure 2M Shown is a flow chart of a method for manufacturing a discontinuous NROM memory cell by a self-aligned process according to Embodiment 1 of the present invention. First, in Figure 2A In this method, a substrate 210 is provided, and an ONO layer such as a sandwich structure is formed on the substrate 210 . Wherein, the ...

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Abstract

The manufacture of memory unit of discontinuous nitride ROM includes first providing substrate and forming ONO layer comprising upper oxide layer, nitride layer and lower oxide layer, on the substrate; subsequent defining the upper oxide layer and several disposable spacers; implanting memory unit block or embedded bit line via self-aligning process and defining the nitride layer according to thedisposable spacers; defining the lower oxide layer according to the discontinuous nitride layer to form several discontinuous columns with passages between them; forming several oxide passages and forming oxide layers on the oxide passages and the nitride layer. The present invention can solve the difficult problems of trapping electrons into the nitride layer and controlling the shared positionbetween the implant and the ONO layer.

Description

technical field [0001] The invention relates to a method for manufacturing a storage unit of a memory, in particular to a method for manufacturing a storage unit of a nitride read-only memory. Background technique [0002] Memory devices that can store non-volatile data, such as read-only memory (ROM), programmable read-only memory (PROM) and electrically programmable read-only memory (erasable programmable ROM, EPROM), and other advanced (advanced) storage devices have been commonly used in industry and commerce around the world. Advanced storage devices usually involve more complex manufacturing and testing procedures than general storage devices, and advanced storage devices include electrically erasable read-only memory (electrically EPROM, EEPROM), flash (flash) EEPROM and nitride programmable read-only memory (nitride programmable read-only memory, NROM). These advanced storage devices can perform tasks that ordinary ROMs cannot. For example, circuits using EEPROM de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H10B20/00
Inventor 赖二琨
Owner MACRONIX INT CO LTD