Wafer edge etching apparatus and method

Abstract

A wafer edge etching apparatus and method for etching an edge of a semiconductor wafer including a bottom electrode, arranged below the semiconductor wafer and acting as a stage to support the semiconductor wafer. A method of etching a semiconductor wafer including inserting a semiconductor wafer into a chamber, increasing a pressure in the chamber, supplying at least one etchant gas to the chamber while further increasing the pressure, supplying power to the chamber and etching the semiconductor wafer at the edge bead or the backside of the semiconductor wafer, discontinuing the power and the etchant gas, venting the chamber with a venting gas, and purging the venting gas from the chamber.

Description

[0001] This U.S. non-provisional application claims the priority of Korean Patent Application No. 2003-33844 filed on May 27, 2003 under 35U.S.C.§119, which is hereby incorporated by reference in its entirety. Technical field [0002] The invention relates to a wafer edge etching equipment and method. Background technique [0003] Perform wafer edge etching to remove the thin film layer on the peripheral area of ​​the wafer. The peripheral area of ​​the wafer is often called a bead. The edge ring of the wafer is etched because the thin film layer on the edge during the manufacturing process may cause defects on the chip and reduce the yield. The thin film layer can be removed from the edge by wet or dry etching. As the chip size decreases, the need to etch the edges becomes more important. [0004] Conventional devices etch the thin film layer at the edge circle. However, in conventional devices, the plasma generated by this device is too weak to etch the thin film layer at the ed...

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Problems solved by technology

However, increased power may warp the wafer

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