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Non-volatile memory

A non-volatile memory technology, applied in static memory, read-only memory, digital memory information, etc., can solve the problems of time-consuming, easy-to-strip, etc.

Inactive Publication Date: 2005-03-16
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Compared with SRAM, DRAM has a larger capacity per unit area and is cheaper to manufacture. The problem is that the output of storage is the release of charge, so the output of storage takes time, and often needs to supply charge (update)
[0009] However, in the above method, the organic film is not chemically bonded to the surface of the substrate, so it is easy to peel off, and the electrical properties also need to be further improved.

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0154] First, to investigate the mechanism of the record, use Figure 4 Such basic components measure electrical properties.

[0155] The PEN obtained in the above synthesis example was dissolved in polydimethylsiloxane (silicone oil) as a non-aqueous solvent at a concentration of 1% to obtain a coating solution. Apply the above-mentioned coating solution to the glass substrate 4, then at room temperature (25°C), the hydroxyl group (-OH) on the glass surface and the chlorosilyl group (-SiCl) of PEN 3 ) A dehydrochlorination reaction occurs between the PEN and the glass surface through a covalent bond. A platinum electrode 10 was vapor-deposited on a part of the surface of the organic film. When the organic film is electrolytically polymerized, any platinum electrode 10 is used as a working electrode. As a supporting electrolyte, prepare an acetonitrile solution with a concentration of 0.05 mol / L such as anhydrous lithium perchlorate (tetraethylammonium tetrafluoroborate, te...

Embodiment 2

[0160] In this embodiment, first as Figure 6A As shown, the lateral selection lines 61 made of a conductive material are formed on a glass substrate 64 by coating in a matrix or the like. This wiring is, for example, p-type, and is produced by mixing p-type impurities during vapor deposition, or by implanting p-type impurities after vapor deposition, ion doping, or the like, and accelerating the implantation of p-type impurities. The p-type impurities are B, Al, Ga, In, TL, etc.

[0161] Subsequently, SiO is formed by film formation or coating 2 Electrically insulating material 63 (film thickness 300nm) ( Figure 6B ). Then, if Figure 6C As shown, a contact hole 67 is opened on the electrical insulating material 63, such as Figure 6D As shown, the n-type region 65 is formed by implanting n-type ions. The n-type impurities are N, P, As, Sb, Bi, etc. In addition, in this embodiment, the rectifying element is formed by a pn junction, but it may also be formed by a Schot...

Embodiment 3

[0176] In this embodiment, first as Figure 10A As shown, an organic film (monomolecular film) 7 is formed substantially entirely on a glass or polyimide film substrate 4 . As an organic film material, for example, a compound represented by the following formula 17 is used. As the coating method, vacuum deposition, coating using a spin coater, coating method of immersing in a solution, and the like can be used. Due to the existence of active hydrogen such as hydroxyl groups on the surface of the glass or polyimide film substrate 4, dehydrochlorination or dealcoholization reactions occur between the halosilyl groups or alkoxysilyl groups of the above-mentioned compounds, and the residues of the above-mentioned compounds Bonds to the substrate surface via covalent bonds. Then, washing is performed with a non-aqueous solution to obtain a monomolecular film.

[0177] For example, dilute 11-(1-pyrrolyl)-undecenyltrichlorosilane represented by the following chemical formula (17) ...

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Abstract

A nonvolatile memory includes at least a first electrode (71) and a second electrode (72) provided on a substrate, the first and second electrodes being separated from each other, and a conductive organic thin film (73) for electrically connecting the first and second electrodes. The conductive organic thin film (73) has a first electric state in which it exhibits a first resistance, and a second electric state in which it exhibits a second resistance. A first threshold voltage for a transition from the first electric state to the second electric state, and a second threshold voltage for a transition from the second electric state to the first electric state are different from each other, and either the first electric state or the second electric state is maintained at a voltage in a range between the first threshold voltage and the second threshold voltage. The conductive organic thin film (73) is bound with a surface of the substrate by conjugate bonds. A diode (74) may be connected with the conductive organic thin film (73). This provides a nonvolatile memory that not only allows writing / reading of record to be performed utilizing a change in an electrical resistance of the conductive organic thin film (73), but also can be densely packaged.

Description

technical field [0001] The present invention relates to a nonvolatile memory (also referred to as a nonvolatile memory; nonvolatile memory) in which a conductive organic thin film is formed. More specifically, the application as memory relates to non-volatile memory suitable for use in memory cards or computer systems as a secondary storage medium capable of retaining information even when the power supply is cut off, and therefore does not require the support provided by a battery. Background technique [0002] In recent years, with the rapid expansion of the Internet, due to the high demand for computers, especially personal computers (hereinafter, referred to as "PC"), related technologies are changing day by day. In addition, the market demands products with higher performance and lower price, and suppliers compete fiercely to meet the demand. One of the main factors determining the performance of a computer is a memory device, and the mainstream is a semiconductor memo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C13/02G11C16/02H01L51/00H01L51/30
CPCB82Y10/00G11C13/0016G11C13/0014H01L51/0094H10K85/40H01L27/10
Inventor 山本伸一小川一文美浓规央
Owner PANASONIC CORP
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