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Forecasting method of single crystal internal connecting line-shaped nucleus and growth temp.

A prediction method and growth temperature technology, which can be used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., and can solve problems such as manpower and material resources.

Inactive Publication Date: 2005-08-10
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the actual production needs to invest more manpower and material resources

Method used

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  • Forecasting method of single crystal internal connecting line-shaped nucleus and growth temp.
  • Forecasting method of single crystal internal connecting line-shaped nucleus and growth temp.
  • Forecasting method of single crystal internal connecting line-shaped nucleus and growth temp.

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0064] Al melt in SiO with a length of 5mm, a width of 400mm, and a depth of 100nm 2 in the base. Al wets SiO 2 The contact angle is 55°, and the data used in the calculation are shown in Table 1.

[0065] Table 1. Values ​​of relevant parameters required to calculate the growth temperature of Al single crystal interconnectors

[0066] h m E(∞) S vir (∞)T m v m K L

[0067] / Jmol -1 / Jmol -1 / Jmol -1 K -1 / K / nm / cm 3 mol -1 / Js -1 k -1 cm -1

[0068] Al 10790 16500 6.15 933 0.286 10 0.94

[0069] R=8.314Jmol -1 K -1 h P =6.6262×10 -34 J·s; k=1.3806×10 -23 J.K. -1

[0070] According to the formula (20), the relationship between the growth length L and the degree of supercooling ΔT is obtained. The specific calculation process is as follows: Let (T m -T) / T m =x, from G(r, T) / r=0 to get the relationship between the critical crystal nucleus size and the degree of supercooling:

[0071] r...

Embodiment 2

[0083] If SiO 2 The dimensions of the substrates are all changed by 10 times, that is, the length is 50mm, the width is 4000mm, and the depth is 1000nm.

[0084] At this point, only the number of Al atoms in a given volume of substrate changes, and the calculation

[0085] n = 50 × 10 6 × 4000 × 1000 ( 4 3 · π · ( h 2 ) 3 ) = 12 × 10 14 ...

Embodiment 3

[0088] Calculate the degree of undercooling required to form a single crystal interconnection when Cu is used as the interconnection material.

[0089] The Cu melt is placed in SiO with a length of 5mm, a width of 400nm and a depth of 100nm 2 Solidification in the substrate forms a Cu single crystal interconnection line. See Table 2 for the data used in the calculation.

[0090] Table 2 Calculation of the relevant parameter values ​​required for the growth temperature of Cu single crystal interconnectors

[0091] h m E(∞) S vir (∞)T m v m K L

[0092] / Jmol -1 / Jmol -1 / Jmol -1 K -1 / K / nm / cm 3 mol -1 / Js -1 k -1 cm -1

[0093] Cu 13050 30500 8.06 1358 0.256 7.1 3.34

[0094] The relationship between the critical crystal nucleus size and the degree of supercooling is:

[0095] r * = [ 4.524 ...

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Abstract

Based on size dependent model of interfacial energy between solid and liquid, the disclosed method modifies classical nucleation theory. Combining with concretion kinetic model of nucleation rate and rate of growth, the method crates analytical relation between nucleation time and growth length under certain growth temperature. The theory can predict degree of supercooling needed for forming inner connecting line of single crystal. The method can analyze mechanism of forming inner connecting line of single crystal as well as predict technical temperature needed for forming inner connecting line of different metal single crystals in SiO2 grooves in different sizes.

Description

technical field [0001] The invention relates to a method for determining the process temperature of nucleation and growth in order to obtain a certain length of single-crystal interconnection wires in the manufacture of integrated circuits. Background technique [0002] Because Al single crystal has excellent electromagnetic properties and can greatly reduce the stress-induced open circuit fault in the circuit, it is widely used as the interconnection material in the integrated circuit. Recently, there has been a breakthrough in the experimental technology for preparing Al single crystals, which can be prepared on SiO 2 In the groove, it can be obtained by proper temperature control. During the preparation process, its supercooling degree can reach 82K, that is, the state of the melt can be maintained to 82K ​​below the melting point, which can also be expressed as ΔT=T m -T=82K, where T m is the melting temperature of bulk Al, and T is the actual temperature required to ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/60
Inventor 文子周孝好赵明李建陈蒋青
Owner JILIN UNIV