Envelope follower end point detection in time division multiplexed processes

A technology of time-division multiplexing and alternate processing, applied in vacuum gauges using ionization effects, semiconductor/solid-state device testing/measurement, semiconductor/solid-state device manufacturing, etc., can solve problems such as not providing advantages

Active Publication Date: 2006-06-07
UNAXIS USA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0014] The concomitant advantages of the present invention are not provided at all in the prior art

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  • Envelope follower end point detection in time division multiplexed processes
  • Envelope follower end point detection in time division multiplexed processes
  • Envelope follower end point detection in time division multiplexed processes

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Embodiment Construction

[0053] We disclose a method for detecting transitions between different materials in a time-division multiplexed (TDM) process by analyzing the intensity of at least one wavelength region emitted by the plasma without synchronous triggers.

[0054] Due to the periodic and repetitive nature of the TDM process, by design, the process has multiple characteristic frequencies associated with it. As an example, consider a two-step TDM silicon etch process consisting of a five-second etch step followed by a five-second deposition step repeated multiple times in sequence (see Table 1 below). One characteristic frequency determined by the total cycle time (10 seconds) is 0.1 Hz.

[0055] processing parameters

Units of measurement

deposition

etching

SF 6 flow

sccm

0.5

100

C 4 f 8 flow

sccm

70

0.5

Ar flow

sccm

40

40

pressure

mTorr

22

23

RF bias power

W

...

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Abstract

The present invention provides a method and apparatus for establishing an end point during an alternating cycle etching process or a time division multiplexing process. The substrate is placed in a plasma chamber and processed in an alternating cycle of one etching step and one deposition step. Changes in plasma emission intensity are monitored using well-known optical emission spectrometry techniques. An envelope follower algorithm is used to extract amplitude information from the complex waveform of plasma emission intensity. The alternating loop processing is interrupted when the end point is reached within a certain time according to the monitoring step.

Description

[0001] Cross References to Related Patents [0002] This application claims priority to and related to commonly owned U.S. Provisional Patent Application No. 60 / 469,333, filed May 9, 2003, entitled Envelope Follower Endpoint Detection in Time Division Multiplexing Processing, hereby Cite this provisional patent application. technical field [0003] The present invention relates generally to the field of semiconductor wafer processing. More specifically, the present invention relates to determining the endpoint of an etch process during a time-division multiplexed etch and deposition process. Background technique [0004] During the fabrication of many microelectromechanical (MEMS) devices, it is necessary to etch a layer of material to stop completely below that layer (e.g., silicon-on-insulator (SOI): silicon dioxide that clears a layer of silicon (Si) to stop below it (SiO 2 )layer). As the etch process progresses, beyond the time that the first layer has been removed,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66G01L21/30H01J37/32H01L21/3065
CPCB81C1/00587B81C2201/0132H01J37/32935H01J37/32963H01L21/30655
Inventor 鲁塞尔·韦斯特曼大卫·约翰逊
Owner UNAXIS USA
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