Unlock instant, AI-driven research and patent intelligence for your innovation.

Pixel unit and display

A technology for pixel units and display devices, applied in electrical components, electrical solid devices, circuits, etc., can solve the problems of different parasitic capacitance and capacitance values, alignment errors, etc.

Active Publication Date: 2006-08-30
AU OPTRONICS CORP
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the pixel units in each area are not manufactured at the same time, each area may have its own alignment error, thus causing the capacitance value of the parasitic capacitance of the pixel units in each area to be different

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pixel unit and display
  • Pixel unit and display
  • Pixel unit and display

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] Due to the parasitic capacitance C p Therefore, when the thin film transistor 12 is switched from the conduction state to the non-conduction state, the voltage of the storage capacitor 14 will change, and the voltage change ΔV is as follows:

[0034] ΔV = ( V gateoff - V gateon ) C gd C gd + C S + C other - - - ( 1 )

[0035] Among them, C gd is the parasitic capacitance C p The capacitance value, C s is the capacitance value of the storage capacitor 14, C other For other capacitors (such as l...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a pixel unit and a display unit. And the pixel unit comprises a first metallic layer and a second metallic layer, where the first metallic layer has a grid electrode and a first electrode, the second metallic layer has a drain electrode, a source electrode and a second electrode, a first overlap region is where the drain electrode overlaps the grid electrode, a second overlap region is where the source electrode overlaps the grid electrode, a third overlap region is where the second electrode overlaps the first electrode, and the first electrode and the second electrode are of close size and mutually staggered. And the pixel unit can be applied to the display unit. Because the capacitance value of storage capacitor of the invention will change with the change of that of parasitic capacitor, it can automatically offset the deviation of the capacitance value of the parasitic capacitor caused by aligning error, thus fixing voltage variation of the storage capacitor. And when the voltage variation is fixed, it can offset the voltage variation of the storage capacitor by regulating common voltage.

Description

technical field [0001] The present invention relates to a pixel unit, in particular to a pixel unit capable of automatically compensating the capacitance of a parasitic capacitance. Background technique [0002] Figure 1a is a schematic diagram of a known pixel unit. As shown in the figure, the pixel unit 1 includes a thin film transistor (Thin Film Transistor; TFT) 12 and a storage capacitor (storage capacitor; Cs) 14 . The thin film transistor 12 has a gate electrode 122 , a source electrode 124 and a drain electrode 126 . The gate electrode 122 is coupled to the gate line 16 , and the source electrode 124 is coupled to the source line 18 . [0003] Since the gate electrode 122 is made of the first metal layer, and the source electrode 124 and the drain electrode 126 are made of the second metal layer, when the region 128 of a semiconductor layer is disposed on the first metal layer and the second metal layer Between the two metal layers, the gate electrode 122, the ov...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L27/02
Inventor 王涌锋余良彬董畯豪
Owner AU OPTRONICS CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com