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Semiconductor device and manufacturing method

A semiconductor and device technology, applied in the field of semiconductor devices and their manufacturing, can solve the problem of reducing leakage current of transistors

Inactive Publication Date: 2007-07-04
DONGBU ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the channel length is shortened, the threshold voltage V of the transistor th will decrease and the leakage current will increase

Method used

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  • Semiconductor device and manufacturing method
  • Semiconductor device and manufacturing method
  • Semiconductor device and manufacturing method

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Experimental program
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Embodiment Construction

[0015] In order to make the multiple layers and multiple regions clear, the size of the layers described in the figure is enlarged. Throughout the specification, the same reference numerals denote the same components. When it is said that any part, such as a layer, film, region or plate, is arranged on another part, it means that the part is directly on the other part or at least has an intermediate part located above the other part. On the other hand, if it is said that any part is directly arranged on another part, it means that there is no intermediate part between the two parts.

[0016] As shown in FIG. 2, a plurality of isolation wells 110 are formed in the substrate 100. The isolation well 110 is used to electrically isolate a plurality of individual transistors formed in the substrate 100 from each other.

[0017] A trench 122 is formed in the substrate 100 between the isolation wells 110. A gate oxide layer 120 is formed on the trench 122. A gate electrode 131 is formed o...

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Abstract

The invention relate to semiconductor devices and manufacturing methods of semiconductor devices. A semiconductor substrate includes a plurality of isolation regions formed therein and having a trench in a region between the isolation wells, a gate insulating layer formed within the trench, a gate electrode formed on the gate insulating layer filling the trench, and source and drain electrodes formed on the substrate between the gate electrode and the isolation wells.

Description

[0001] This application claims the priority of Korean Patent Application No. 10-2005-0134052 (filed on December 29, 2005) and Korean Patent Application No. 10-2005-0134053 (filed on December 29, 2005), which is hereby incorporated by reference Incorporate the two as a whole into this article. Technical field [0002] The present invention relates to a semiconductor device and a manufacturing method thereof. The transistor has a gate, source, and drain defined in the device region by a local oxidation of silicon (LOCOS) method or a shallow trench isolation (STI) method. Background technique [0003] Generally, the transistor has a structure as shown in FIG. 1. The transistor includes a gate electrode 220 formed on a substrate 200 in which an STI layer 210 is formed. A source electrode 230 and a drain electrode 240 are formed in the substrate on both sides of the gate electrode 220. [0004] Hereinafter, a manufacturing method of manufacturing the transistor in FIG. 1 will be descri...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/423H01L27/04H01L21/336H01L21/28H01L21/822H01L21/76
CPCH01L21/26506H01L21/324H01L29/4236
Inventor 朴茔泽
Owner DONGBU ELECTRONICS CO LTD