Sawing method for a wafer
a technology of a wafer and a cutting edge, which is applied in the field of cutting edge of a wafer, can solve the problems of contaminated active surface of the dice, damage and scratching of the active surface of the wafer, and large area near the cutting edge may peel
Inactive Publication Date: 2008-02-21
ADVANCED SEMICON ENG INC
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Benefits of technology
The present invention provides a sawing method for a wafer that includes steps to protect the wafer during the process. The method includes coating the wafer with a protection layer, taping a grinding tape on top of the protection layer, grinding the back surface of the wafer to thin it, and then removing the grinding tape before sawing the wafer to form dice. The protection layer remains attached to the wafer after the thinning step, providing protection for the wafer and preventing peeling or damage to the sawing lines. The protection layer is removed after sawing, ensuring the active surface of the dice is not contaminated.
Problems solved by technology
Furthermore, a larger area near the sawing lines may also peel, and the active surface 101 of the wafer 10 will be damaged and scratched.
Therefore, when sawing the wafer to form a plurality of dice, the active surface of the dice will be contaminated.
Method used
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[0021]FIGS. 5 to 10 show a sawing method for a wafer according to the present invention. Referring to FIG. 5, firstly, a wafer 20 is provided. The wafer 20 has an active surface 201 and a back surface 202, and the active surface 201 has a plurality of sawing lines (not shown). Referring to FIG. 6, a protection layer 21 is coated on the active surface 201 and the sawing lines, and the protection layer 21 totally covers the active surface 201 and the sawing lines. In the embodiment, the protection layer 21 is coated on the active surface 201 and the sawing lines by using a spin-coating method. The protection layer 21 is an adhesive. In the embodiment, the adhesive is epoxy.
[0022]After the step of coating the protection layer 21 on the active surface 201 and on the sawing lines, a baking step for solidifying the protection layer 21 proceeds so as to protect the wafer 20. Since the protection layer 21 coated on the active surface 201 is liquid material, the protection layer 21 can total...
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Abstract
The present invention relates to a sawing method for a wafer. The sawing method of the invention comprises: (a) providing a wafer, the wafer having an active surface and a back surface, the active surface having a plurality of sawing lines; (b) coating a protection layer on the active surface and the sawing lines; (c) taping a grinding tape on a surface of the protection layer; (d) grinding the back surface of the wafer to thin the wafer; (e) removing the grinding tape; and (f) sawing the wafer to form a plurality of dice. Whereby, the problems of die cracking, die scratching, die contamination and peeling of the surface of the sawing lines can be avoided.
Description
BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The invention relates to a sawing method for a wafer, particularly to a sawing method for a wafer with a protection layer coating on a surface of the wafer.[0003]2. Description of the Related Art[0004]FIGS. 1 to 4 show the steps for a conventional sawing method. Referring to FIG. 1, firstly, a wafer 10 is provided. The wafer 10 has an active surface 101 and a back surface 102, and the active surface 101 has a plurality of sawing lines (not shown). A grinding tape 11 is then taped on the active surface 101. The grinding tape 11 is used to protect the active surface 101 in the following grinding process.[0005]Referring to FIG. 2, the wafer 10 is thinned by grinding the back surface 102. For the conventional sawing method, the wafer 10 is thinned by using the grinding wheel of a grinding machine (not shown) to grind the back surface 102. The grinding tape 11 is then removed, as shown in FIG. 3. Finally, the wafer 10 is saw...
Claims
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IPC IPC(8): B24B1/00
CPCB24B1/00B24B7/228B28D5/00H01L2221/6834H01L21/6836H01L21/78H01L2221/68327H01L21/6835
InventorCHU, FU-TANGCHUNG, CHI-YUAMTENG, JI-PING
OwnerADVANCED SEMICON ENG INC