Symmetric charge pump replica bias detector

a charge pump and bias detector technology, applied in the direction of automatic control, process and machine control, instruments, etc., can solve the problems of asymmetric and long turn-off decay, switching transients still not optimally reduced, and low cost, and small siz

Inactive Publication Date: 2008-08-14
SUDJIAN DOUGLAS +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this type of design suffers from larger internal dynamic voltage swings that increase the reference frequency feed through from the switching elements to the filter load.
However, since the internal circuit nodes settle to their own internal turn-on and turn-off voltages, this leads to potentially long and asymmetric turn-off decays.
In addition, switching transients are still not optimally reduced in these designs.

Method used

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  • Symmetric charge pump replica bias detector
  • Symmetric charge pump replica bias detector
  • Symmetric charge pump replica bias detector

Examples

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Embodiment Construction

[0043]FIG. 4 is a schematic of the top-side PMOS current source of a charge pump constructed in accordance with the principles of the present invention. The charge pump theory of operation is common between the top-side PMOS current source and bottom-side current sink circuits. Therefore the explanation on the PMOS top-side circuit is sufficient for the total charge pump section. This embodiment is for a new Charge Pump architecture and design for use in a PLL frequency synthesizer for radio frequency applications including but not limited GSM standard with a very symmetrical charge pump current drive. This novel architecture permits the symmetrical turn-on time, rise time and fall time to be independent in the design and optimization process. The generation of differential output phases for both pump-up, PU and pump-down, PD is synchronized by a PFD and charge pump driver and buffer. All current source and sink cells are identical and should track very well over manufacturing proce...

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Abstract

A charge pump replica bias detector is disclosed which provides a charge pump with a greater working output voltage range or larger output compliance. A larger working range will provide a charge pump with more symmetric source and sink currents than prior designs with a reduction of the multiple frequency sideband levels that occur in a voltage controlled oscillator of a phase-locked loop synthesizer. Further improvements are the prevention of disturbances of the loop filter voltage level due to unwanted leakage currents in a charge pump that are dependent on the value of loop filter voltage. Finally, by providing improved output voltage compliance and limiting loop filter voltage disturbances there are improvements in the reduction in reference frequency feed-through, charge sharing and noise transient coupling and phase noise in the phase-locked loop. Possible applications include but are not limited to charge pump phase-locked loop designs for single chip CMOS multi-band and multi-standard radio frequency transceiver integrated circuits.

Description

[0001]THIS APPLICATION IS BASED ON THE PROVISIONAL APPLICATION No. 60 / 487,614 FILED ON Jul. 17, 2003 and application Ser. No. 10 / 809,033 FILED ON Jul. 13, 2004REFERENCES[0002][1] Chih-Ming Hung and Kenneth K. O, “A Fully integrated 1.5V 5.5 GHz CMOS Phase-Locked Loop”, IEEE JSSC, Vol. 37, No. 4, April 2002.[0003][2] William Wilson, Un-Ku Moon, Kadaba R. Lakshmikumar and Liang Dai “A Self-Calibrating Frequency Synthesizer”, IEEE JSSC, Vol. 35, No. 10, October 2000.BACKGROUND[0004]1. Technical Field of Invention[0005]The present invention relates to a replica bias detector and circuit design used in a high efficiency symmetric CMOS charge pump architecture that can be used in phase-locked loop (PLL) frequency synthesizers. The PLL application examples include but are not limited to radio frequency receivers and transmitters for all wireless communication standards including cellular 2.5G / 3G / 4G wireless communications, optical fiber communications, network communications and storage sy...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G05F1/10
CPCH03L7/0896H03L7/0895
Inventor SUDJIAN, DOUGLASSHEN, DAVID H.
Owner SUDJIAN DOUGLAS
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