Chemical solution for selectively treating or removing a deteriorated layer at a surface of an organic film, and method for using such

a technology of organic film and selective treatment, applied in the field of organic mask formation, can solve the problems of film defect, failure to obtain the desired length of the base material pattern, electrical insulation failure, etc., and achieve the effect of avoiding peeling off of the organic mask, high accuracy, and sufficient adhesion strength

Inactive Publication Date: 2010-12-30
NEC LCD TECH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When a side wall of the base film, which is etched using a resist pattern as a mask, is perpendicular or inverse tapered, if an upper film is formed after removing the resist mask, the step coverage becomes poor, thereby resulting in inducing film defects, for example, electrical insulation failure and breaking of wire.
However, defective shapes are caused at the edge of base material, thereby, failing in obtaining a desired length of the base material pattern.
Therefore it has been difficult to control and adjust the taper angle in wide range and with high accuracy.
In addition, in the related arts disclosed in references 1 and 2, when an adhesion strength of the resist mask with the base film before the treatment described in the references 1 and 2 is low, there has been a possibility that the taper angle may become too large compared with a desired angle, and the resist mask may be caused to peel off at a wet etching process which uses the resist mask.
In addition, when the adhesion strength of the resist mask with the base is high, there has been a possibility that the taper angle may become too small, or not tapered in the technologies disclosed in the references 1 and 2.

Method used

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  • Chemical solution for selectively treating or removing a deteriorated layer at a surface of an organic film, and method for using such
  • Chemical solution for selectively treating or removing a deteriorated layer at a surface of an organic film, and method for using such
  • Chemical solution for selectively treating or removing a deteriorated layer at a surface of an organic film, and method for using such

Examples

Experimental program
Comparison scheme
Effect test

first embodiment

[0196][Organic Pattern Formation+Post-Bake+Chemical Solution Treatment (with Dissolution Reflow)+Adhesion Strength Adjustment Treatment+Wet Etching]

[0197]A first embodiment of the present invention will be explained below. FIG. 7A to FIG. 7E are partial traverse cross sectional views showing a method of wet etching according to the first embodiment of the present invention. FIG. 8 is a figure showing a relation between a taper angle of base film pattern and temperature for a re-bake treatment when a time for the re-bake treatment before the wet etching is fixed.

[0198]As shown in FIG. 7A, chromium film 32 is formed on insulating substrate 31. A thickness of chromium film 32 is about 1 μm. Resist pattern 33 is formed on a predetermined area on chromium film 32 using a well known photolithography technology. A base structure of chromium film 32 is insulating substrate 31 in this case. However, the insulating substrate may be, for example, a transparent substrate such as glass for a liq...

second embodiment

[0219][Organic Pattern Formation+Post-Bake+Chemical Treatment (without Reflow)+Re-Bake+Wet Etching]

[0220]A second embodiment of the present invention will be explained below. FIG. 9A to FIG. 9E are partial traverse cross sectional views showing a method of wet etching according to the second embodiment of the present invention. Wet etching of the second embodiment shown in FIG. 9A to FIG. 9E is different from the first embodiment explained by referring to FIG. 7A to FIG. 7E in that the organic solvent which is not sufficient to cause the dissolution reflow is permeated in the resist pattern.

[0221]As shown in FIG. 9A, chromium film 32 has been formed on insulating substrate 31. A thickness of chromium film 32 is about 100 nm. Resist pattern 33 is formed on a predetermined area on chromium film 32 using a well known photolithography technology. A base structure of chromium film 32 is insulating substrate 31 in this case. However, the insulating substrate may be, for example, a transpa...

third embodiment

[0231][Organic Pattern Formation+Post-Bake+Chemical Treatment (with Reflow)+Re-Bake+Anisotropic Dry Etching]

[0232]A third embodiment of the present invention will be described below. FIG. 10A to FIG. 10E are partial traverse cross sectional views showing a method of anisotropic dry etching according to the third embodiment of the present invention. As shown in FIG. 10A, chromium film 32 has been formed on insulating substrate 31. A thickness of chromium film 32 is about 100 nm Resist pattern 33 was formed on a predetermined area on chromium film 32 using a well known photolithography technology. A base structure of chromium film 32 is an insulating substrate 31 in this case. However, the insulating substrate may be, for example, a transparent substrate such as glass for a liquid crystal display apparatus, an amorphous silicon, a silicon oxide, a silicon nitride, and a silicon oxide and a silicon nitride for semiconductor integral circuits.

[0233]As shown in FIG. 10B, a post-bake trea...

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Abstract

A method for forming an organic mask, includes:permeating an organic solvent into an organic pattern formed on a base film and containing at least one kind of organic material, by contacting the organic pattern with the organic solvent; andthereby, partially or entirely decreasing original adhesion strength between the base film and the organic pattern. A heat treatment may be conducted after contacting to adjust the adhesion strength. Using the organic pattern as a mask, isotropic etching is conducted. As a result, a desired taper angle of the etched base film can be achieved with high accuracy. The taper angle of the etched base film is adjustable by controlling the adhesion strength through the heat treatment.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a method for forming an organic mask and a method for forming a pattern using the organic mask.[0003]For the purpose of sufficiently explaining the current level of the art related to the present invention, descriptions of all patents, patent applications, patent gadgets, scientific literatures and the like quoted or specified herein are incorporated herein by reference in its entirety.[0004]2. Description of the Related Art[0005]A process for etching a base film using a resist pattern as a mask is an essential process for fabricating semiconductor devices. There are two types of etching, isotropic etching exemplified by wet etching and anisotropic etching exemplified by dry etching. The isotropic etching in the present invention means that the etching proceeds to right and left directions as well as up and down directions, while etching speeds of right and left directions are not always...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): C09K13/00G03F7/40B44C1/22H01L21/027H01L21/306H01L21/3065
CPCH01L21/0273H01L21/67063H01L21/32139
InventorKIDO, SHUSAKU
OwnerNEC LCD TECH CORP