Method for thermal processing a semiconductor wafer

a technology of thermal processing and semiconductor wafers, applied in drying machines, lighting and heating apparatus, furnaces, etc., can solve the problems of processing wafers and particle problems, and achieve the effect of rapid thermal processing

Active Publication Date: 2008-07-01
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This method effectively prevents particle contamination, enhancing the precision and quality of integrated circuits by maintaining temperature uniformity and reducing particle deposition on the wafer surface during RTP.

Problems solved by technology

However, the prior art method for thermal processing a wafer arises particle problems.

Method used

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  • Method for thermal processing a semiconductor wafer
  • Method for thermal processing a semiconductor wafer
  • Method for thermal processing a semiconductor wafer

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Embodiment Construction

[0019]The present invention pertains to a newly designed radiation-first RTP method for alleviating or eliminating particle problem thereof. As mentioned, rotation of susceptors bearing wafers is employed to uniformly heat wafers. After thermal processing a wafer, a succeeding wafer, which is typically transported at room temperature, is loaded into the cooled down RTP chamber.

[0020]In order to speed up the throughput of the volume production of ICs and some other reasons, the RTP chamber are ordinarily cooled down to about a temperature of about 30-80° C., instead of room temperature. Upon the loading of the succeeding wafer, the susceptor starts to rotate. Processing gas, if necessary, is then flowed into the chamber. A pre-set heating program, which is stored in and executed by a computer, is then activated to heat the wafer in either a “soak” mode or a “spike” mode for a pre-selected time period, for example, 30-90 seconds.

[0021]It is discovered that after batches of wafers for ...

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Abstract

A method for thermal processing a semiconductor wafer is disclosed. A rapid thermal processing (RTP) chamber encompasses a heating means, a rotation means, and a cooling system for cooling walls of said RTP chamber. A semiconductor wafer is loaded into the RTP chamber just being cooling down to a first temperature by using the cooling system. When loading the semiconductor wafer, it has a temperature that is lower than the first temperature, thereby causing a tendency of particle deposition from the walls of the RTP chamber onto the semiconductor wafer. The semiconductor wafer is pre-heated to a second temperature higher than the first temperature with the heating means, thereby eliminating the tendency of particle deposition. Upon reaching the second temperature, the rotation means is activated to start to rotate the semiconductor wafer, while the semiconductor wafer being ramped up to a third temperature.

Description

CROSS REFERENCE TO RELATED APPLICATIONS[0001]This is a divisional application of U.S. application Ser. No. 11 / 160,199 filed Jun. 13, 2005.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to rapid thermal processing (RTP) of semiconductor wafers and, more particularly, to a radiation-first RTP method for uniformly thermal-processing a rotating semiconductor wafer.[0004]2. Description of the Prior Art[0005]Rapid thermal processing (hereinafter referred to as “RTP”) methods and RTP systems are known in the art. A RTP chamber refers to a device that rapidly heats objects, such as semiconductor wafers. Such devices typically include a substrate holder for holding a semiconductor wafer and an energy source for heating the wafer. During heat treatment, the semiconductor wafers are heated under controlled conditions according to a pre-set temperature regime. For monitoring the temperature of the semiconductor wafer during heat treatment, thermal ...

Claims

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Application Information

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Patent Type & AuthorityPatents(United States)
IPC IPC(8): H01L21/324
CPCH01L21/67109H01L21/67248H01L21/67115
InventorTSAI, TSUNG-HSUN
OwnerUNITED MICROELECTRONICS CORP