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Solid-state image sensor and camera having image sensor with planarized insulative film

a technology of image sensor and film, applied in the field of solid-state image sensor and camera, can solve the problem of sensitivity difference between the center and the periphery of the pixel area

Active Publication Date: 2013-10-08
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a method for improving the smoothness of the surface of an insulating film in a solid-state image sensor. This is achieved by using an insulating film to cover the photoelectric converter and the transfer gate electrode, as well as the MOS transistor in the peripheral circuit area. This technique helps to reduce unevenness and improve the quality of the image sensor.

Problems solved by technology

This leads to a sensitivity difference between the center and periphery of the pixel area, generating shading.

Method used

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  • Solid-state image sensor and camera having image sensor with planarized insulative film
  • Solid-state image sensor and camera having image sensor with planarized insulative film
  • Solid-state image sensor and camera having image sensor with planarized insulative film

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first embodiment

[0018]A solid-state image sensor in the present invention will be explained with reference to FIGS. 2A to 2E. FIGS. 2A to 2E are sectional views exemplifying part of the structures of the respective areas in the solid-state image sensor 100 shown in FIG. 1. The solid-state image sensor 100 is formed on a silicon substrate (semiconductor substrate) 20. FIG. 2A is a sectional view exemplifying the structure of a pixel in the pixel array area 110. FIG. 2B is a sectional view exemplifying the structure of part of the row selecting circuit 120 and column selecting circuit 133. FIG. 2C is a sectional view exemplifying the structure of part of the readout circuit 131. FIG. 2D is a sectional view exemplifying the structure of part of the switching circuit 132. FIG. 2E is a sectional view exemplifying the structure of part of the low-density area 140.

[0019]Each pixel can include a photoelectric converter 2a formed from a buried photodiode, a transfer MOS transistor 2b, an amplification MOS t...

third embodiment

[0038]To solve this, in the third embodiment, the first insulating film 3a has an opening above a transfer gate electrode 4a, the contact plug 15 is connected to the transfer gate electrode 4a through the opening, and the area of the opening is larger than the bottom area of the contact plug 15. Similarly, the first insulating film 3a has an opening above the gate electrode 4, the contact plug 15 is connected to the gate electrode 4 through the opening, and the area of the opening is larger than the bottom area of the contact plug 15. Also, the second insulating film 3b has an opening above the gate electrode 4 in a peripheral circuit area 150, the contact plug 15 is connected to the gate electrode 4 through the opening, and the area of the opening is larger than the bottom area of the contact plug 15. Similarly, the third insulating film 3c has an opening above the conducive material pattern 4′ in the peripheral circuit area 150, the contact plug 15 is connected to the conducive ma...

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Abstract

A solid-state image sensor having a pixel array area where a plurality of pixels are arranged, and a peripheral circuit area, each pixel including a photoelectric converter, and a transfer gate electrode which forms a channel for transferring charges generated by the photoelectric converter to a floating diffusion portion, comprises a first insulating film arranged to cover an upper surface of the photoelectric converter, at least part of an upper surface of the transfer gate electrode, and a side surface of the transfer gate electrode, a second insulating film arranged on a gate electrode of a MOS transistor arranged in the peripheral circuit area, and an interlayer insulating film arranged in contact with the first insulating film and the second insulating film.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a solid-state image sensor and a camera in which it is included.[0003]2. Description of the Related Art[0004]A planarization technique called CMP (Chemical Mechanical Polishing) is used to planarize the surface of an interlayer insulating film in a solid-state image sensor. Japanese Patent Laid-Open No. 2008-098373 discloses a technique of reducing a global step serving as the level difference of the surface of an interlayer insulating film on the entire chip. More specifically, Japanese Patent Laid-Open No. 2008-098373 discloses a technique of simultaneously forming an insulating film which covers photodiodes in the pixel area and an insulating film which covers dummy gate electrodes in the peripheral circuit area and scribe lane area, and forming an interlayer insulating film on these insulating films. Dummy gate electrodes arranged in the peripheral circuit area are formed in a space ...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H04N5/335H01L31/062H04N23/40H04N25/00
CPCH01L27/14614H01L27/14632H01L27/14636H01L27/14638
Inventor AKIYAMA, TAKESHINARUSE, HIROAKIIWATA, JUNJIMATSUNO, YASUSHI
Owner CANON KK