Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Thin-film transistor array substrate, its electric static discharge protector and method for making same

An electrostatic discharge protection, thin film transistor technology, applied in transistors, optics, instruments, etc., can solve the problem of unable to detect damaged pixels, etc.

Inactive Publication Date: 2008-07-16
CHUNGHWA PICTURE TUBES LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, it is impossible to only read the data on one of the specific data lines, and it is impossible to detect damaged pixels

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin-film transistor array substrate, its electric static discharge protector and method for making same
  • Thin-film transistor array substrate, its electric static discharge protector and method for making same
  • Thin-film transistor array substrate, its electric static discharge protector and method for making same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0107] Please refer to figure 1 Shown is a top view of the thin film transistor array substrate and its electrostatic discharge protection element of the present invention. The thin film transistor array substrate 100 mainly includes: a substrate (not shown in the figure), a plurality of scanning wirings 112, a plurality of data wirings 114, a plurality of pixel structures, a scanning driving circuit 120, a plurality of first electrostatic discharge protection The element 130 , the first shorting bar 140 , the data driving circuit 150 , a plurality of second ESD protection elements 160 and the second shorting bar 170 .

[0108] The substrate has a display area 110a and a peripheral circuit area 110b. The display area 110a is an area for displaying images, and the peripheral circuit area 110b is provided with related circuits to drive the display area 110a to display. The scan wiring 112 and the data wiring 114 are disposed in the display area 110 a on the substrate to define...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The TFT array substrate comprises: multiple scanning wirings with a first short-circuit bar on one side, multiple data wirings with a second short-circuit base on side, and static discharge protective elements every with a switch element to conduct over-charge to bar and a paralleled resistance wire fit to detect damaged pixel.

Description

technical field [0001] The invention relates to a thin film transistor array substrate and a manufacturing method thereof, and in particular to a top gate type thin film transistor array substrate, an electrostatic discharge protection element thereof and a manufacturing method thereof. Background technique [0002] Electrostatic discharge is the phenomenon of the movement of static electricity from non-conductive surfaces, which can cause damage to components in integrated circuits and other circuit components. For example, a human body walking on a carpet can detect a static voltage of several hundred to several thousand volts when the relative humidity is high, and a static voltage of about 10,000 volts can be detected when the relative humidity is low. quiescent voltage above volts. [0003] Generally, in the manufacturing process of liquid crystal displays, many machines and personnel will be operated, and the machines and personnel will be charged with static electric...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/1362H01L29/786
Inventor 陈振铭
Owner CHUNGHWA PICTURE TUBES LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products