Semiconductor element

Abstract

The invention provides a semiconductor element with an electrostatic discharge protection function. The semiconductor element comprises a substrate, an electrostatic discharge protection polycrystalline silicon layer, a gate electrode contact part and a source electrode contact part, the substrate defines a gate pad region. An electrostatic discharge protection polysilicon layer is disposed on thesubstrate and in the gate pad region. The electrostatic discharge protection polycrystalline silicon layer comprises a first doped region, a second doped region and a third doped region. The first doped region, the second doped region and the fourth doped region have a first electrical property, and the third doped region has a second electrical property. The second doped region surrounds the first doped region, the third doped region surrounds the second doped region, and the fourth doped region surrounds the third doped region. The doping concentration of the first doped region is higher than that of the second doped region. The gate contact portion is disposed over the first doped region and connects the first doped region and the second doped region. The source electrode contact partis arranged above the fourth doped region and is connected with the fourth doped region. The invention can improve the electrostatic discharge protection capability of the semiconductor element.

Description

technical field [0001] The present invention relates to semiconductor components, in particular to a semiconductor component with electrostatic discharge protection function. Background technique [0002] Known semiconductor elements with electrostatic discharge protection function, taking metal oxide half field effect transistor switching element as an example, the electrostatic discharge protection element is usually arranged around the source or drain with a large area, this configuration will make The ESD current passes through peripheral circuits, resulting in a longer ESD response time and complicating component design. [0003] Therefore, in the prior art, the electrostatic discharge protection element is arranged in the gate pad area of ​​the semiconductor element. The design is relatively simple, but since the gate pad area is relatively smaller than the source / drain pad area, the protection provided by the electrostatic discharge protection device ESD is quite lim...

AI Technical Summary

Problems solved by technology

[0008] In view of this, the present invention provides a semiconductor device to solve the problems mentioned in the prior art

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