Semiconductor light-emitting device and method of manufacturing same

Abstract

A semiconductor light-emitting device has a first conductivity type semiconductor layer (3, 4), a luminous layer (5) formed on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer (8) formed on the luminous layer, and a transmissive substrate (9) which is formed on the second conductivity type semiconductor layer (8) and is pervious to light coming from the luminous layer (5). The transmissive substrate (9) has a carrier concentration lower than that of the second conductivity type semiconductor layer (8).

Description

technical field [0001] The present invention relates to, for example, communication devices; road, line, and signage display board devices; advertising display devices; mobile phones; display backlights; Background technique [0002] In recent years, due to the rapid progress in the manufacturing technology of semiconductor light-emitting diodes (hereinafter referred to as "LEDs") as a kind of semiconductor light-emitting element, especially after the blue LED is emitted, the LEDs of the three primary colors of light have been gathered, so by combining this LEDs of three primary colors can produce light of all wavelengths. As a result, the range of application of LEDs has rapidly expanded. Among them, in the field of lighting, as awareness of environmental and energy issues has increased, LEDs have attracted attention as natural light and white light sources that replace light bulbs and fluorescent lamps. [0003] However, compared with light bulbs or fluorescent lamps, exi...

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Problems solved by technology

[0017] Moreover, when the carrier concentration of the above-mentioned transparent substrate is increased, of course, the density of impurities or defects in the transparent substrate will increase, and light will be absorbed or attenuated due to these impurities or defects.

[0018] In addition, in the method of pasting the above-mentioned transparent substrate on the epitaxial layer, heat treatment is performed to paste the transparent substrate on the epitaxial layer, but since the temperature of this heat treatment is very high, atoms as dopants Diffusion, so that atoms as dopants segregate to the paste interface, crystal interface, light-emitting layer, etc.

[0019] In the case where the atoms serving as the dopant segregate to the pasting interface or the crystal interface, or cause a decrease in light transmittance in the pasting interface or the crystal interface, in addition, when the atoms serving as the dopant segregate to the light-emitting layer, will lead to a decrease in the luminous efficiency of the light-emitting layer

[0020] In addition, in the case where a metal layer is provided on the pasting interface for the purpose of reducing the resistance of the pasting interface, the metal layer itself does not transmit ordinary light, and in order to make the contact between the metal and the crystal When the interface contact is good and heat treatment is performed, the alloy layer at the interface (blackening phenomenon) becomes a light absorbing layer, and as a result, the external light export rate does not improve as expected

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