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Magnetic memory device and method for driving the same

A technology of magnetic storage and magnetization direction, applied in information storage, static memory, digital memory information, etc., can solve the problems of MR ratio drop, S/N ratio drop, etc., and achieve the effects of prolonging life, preventing deterioration, and improving reliability

Inactive Publication Date: 2007-10-03
FUJITSU LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the thinning of the barrier layer substantially reduces the MR ratio (the rate of change of resistance between the magnetization parallel state and the antiparallel state) and reduces the S / N ratio, which is actually important for the device.

Method used

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  • Magnetic memory device and method for driving the same
  • Magnetic memory device and method for driving the same
  • Magnetic memory device and method for driving the same

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Experimental program
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Embodiment Construction

[0025] Referring to FIGS. 1-11B , a magnetic storage device and a manufacturing method thereof according to an embodiment of the present invention are described.

[0026] FIG. 1 is a plan view of a magnetic memory device according to the present embodiment, showing the structure of the magnetic memory device. 2A and 2B are schematic cross-sectional views of the magnetic memory device according to the present embodiment, showing the structure of the magnetic memory device. 3A-3C are top views illustrating the working principle of the magnetic storage device according to the present embodiment. 4A-4B are cross-sectional views illustrating the working principle of the magnetic storage device according to the embodiment of the present invention. 5 is a graph showing the relationship between the film thickness of the barrier layer and the MR ratio of the magnetoresistance effect element. 6A-11B are cross-sectional views of a magnetic memory device in steps of a method of manufactur...

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Abstract

The magnetic memory device comprises a magnetoresistive effect element 54 including a magnetic layer 42 having a magnetization direction pinned in a first direction, a non-magnetic layer 50 formed on the magnetic layer 42, and a magnetic layer 52 formed on the non-magnetic layer 50 and having a first magnetic domain magnetized in a first direction and a second magnetic domain magnetized in a second direction opposite to the first direction; and a write current applying circuit for flowing a write current in the second magnetic layer 52 in the first direction or the second direction to shift a magnetic domain wall between the first magnetic domain and the second magnetic domain to control a magnetization direction of a part of the magnetic layer 52, opposed to the magnetic layer 42.

Description

technical field [0001] The invention relates to a magnetic storage device and a driving method thereof, in particular to a magnetic storage device using a spin-injection magnetoresistance effect element and a driving method thereof. Background technique [0002] In recent years, a magnetic random access memory (hereinafter referred to as MRAM) including a plurality of magnetoresistance effect elements arranged in a matrix has attracted attention as a rewritable nonvolatile memory. MRAM stores information using a combination of magnetization directions of two magnetic layers, and detects the difference between the resistance when the magnetization directions of the two magnetic layers are parallel to each other and the resistance when the magnetization directions of the two magnetic layers are anti-parallel to each other. This information is read out by a change in resistance (that is, a change in current or a change in voltage) between them. [0003] A GMR (Giant Magneto Re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/15H01L43/08H01L27/22
CPCG11C11/14H01L27/228G11C11/16H01L43/08G11C19/0833H10B61/22H10N50/10
Inventor 落合隆夫梅原慎二郎芦田裕佐藤雅重小林和雄
Owner FUJITSU LTD