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Magnetoresistance effect film and magnetoresistance effect head

A magnetoresistance effect, thin film technology, used in the manufacture of flux-sensitive magnetic heads, magnetic recording heads, magnetic field-controlled resistors, etc.

Inactive Publication Date: 2005-12-14
FUJITSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The present invention aims to solve the problems existing in traditional magnetoresistive films

Method used

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  • Magnetoresistance effect film and magnetoresistance effect head
  • Magnetoresistance effect film and magnetoresistance effect head
  • Magnetoresistance effect film and magnetoresistance effect head

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0024] figure 1 The basic structure of the magnetoresistance effect thin film according to the embodiment of the present invention is shown. An oxide layer 3 including cobalt-containing ferrite is formed on the magnesium oxide layer 2 serving as an orientation control layer, and a pinned magnetic layer 4, a nonmagnetic intermediate layer 5, a free magnetic layer 6, and a protective layer 7 are in this order stacked on the oxide layer 3.

[0025] The inventors conducted the following experiments.

[0026] Three magnetoresistance film samples were formed on silicon substrates by magnetron sputtering. The sample is as follows:

[0027] Sample "A": CoFe 2 o 4 10 / CoFe / Cu / Co / NiFe / Cu / Ta[nm]

[0028] Sample "B": (CoO_Co 3 o 4 )10 / CoFe 2 o 4 10 / CoFe / Cu / Co / NiFe / Cu / Ta[nm]

[0029] Sample "C": MgO 10 / CoFe 2 o 4 10 / CoFe / Cu / Co / NiFe / Cu / Ta[nm] ...

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Abstract

A magnetoresistance effect thin film having a magnetic oxide layer for fixing the magnetization direction of a pinned magnetic layer and having a high MR ratio. The magnetoresistance effect thin film has a laminated structure in which an orientation control layer, a magnetic oxide layer, a pinned magnetic layer, a nonmagnetic intermediate layer and a free magnetic layer are laminated in this order, wherein the orientation control layer is made of sodium chloride ( An oxide of NaCl) crystal structure is made of or includes an oxide layer of an oxide having a sodium chloride (NaCl) crystal structure, and the energy band width of the oxide of the sodium chloride (NaCl) crystal structure is greater than or equal to 1 eV, and It is not magnetizable at room temperature, and wherein the magnetic oxide layer is an oxide layer comprising cobalt-containing ferrite.

Description

technical field [0001] The present invention relates to a magnetoresistance effect thin film having a high magnetoresistance ratio (MR ratio) and a magnetoresistance effect magnetic head including the magnetoresistance effect thin film. Background technique [0002] The surface recording density of hard disks is getting higher and higher. By increasing the surface recording density, the hard disk area required for each bit can be reduced, thus requiring a high-sensitivity reproducing head in the hard disk drive unit. [0003] Figure 5 The basic structure of a conventional magnetoresistance effect thin film is shown in . Therein, an antiferromagnetic layer 11, a pinned magnetic layer 4, a nonmagnetic intermediate layer 5, a free magnetic layer 6, and a protective layer 7 are stacked. Even if a magnetic field is applied to the pinned magnetic layer 4 from a recording medium (hard disk), the magnetization direction of the pinned magnetic layer 4 must be fixed. In order to f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R33/09G11B5/127G11B5/33G11B5/39H01F10/16H01F10/20H01F10/30H01F10/32H01L43/08H01L43/10
CPCG11B5/39
Inventor 铃木英彦野间贤二
Owner FUJITSU LTD