Substrate treating apparatus and treating gas emitting mechanism

Abstract

The present invention provides a film forming apparatus comprising a treatment vessel (2) for accommodating of semiconductor wafer (W); a mounting table (5) disposed in the treatment vessel (2), on which the semiconductor wafer (W) is placed; a shower head (40) which works as a treating gas emitting mechanism for emitting treating gas into the treatment vessel (2) and is disposed in a position opposite to the mounting table (5); and an exhauster (101) for exhausting the interior of the treatment vessel (2), wherein the shower head (40) has a gas flow channel for introducing the treating gas and a circular temperature control chamber (400) surrounding the gas flow channel.

Description

technical field [0001] The present invention relates to a substrate processing apparatus for performing a process such as film formation on a substrate to be processed such as a semiconductor wafer, and a processing gas ejection mechanism for ejecting a processing gas toward the substrate in the substrate processing apparatus. Background technique [0002] In the manufacturing process of various semiconductor devices, a thin film composed of various substances is formed on a semiconductor wafer (hereinafter sometimes referred to as a "wafer") as an object to be processed, in response to the diversification of physical properties required for the thin film, The substances and combinations used in the formation of thin films are also diversified and complicated. For example, in semiconductor memory elements, in order to overcome the performance limit caused by the refresh operation of DRAM (Dynamic Random Access Memory) elements, development of producing large-capacity memory ...

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Problems solved by technology

However, if the temperature of the outer peripheral region of the mounting table is increased, the portion of the shower head that faces the outer peripheral region of the mounting table (that is, the inner side of the peripheral portion of the shower head) will be damaged by radiant heat from the mounting table. temperature rises easily

[0007] From the above reasons, it can be seen that during the repeated film formation process, a temperature distribution is formed in which the temperature of the peripheral part becomes extremely lower than that of the central part of the shower head, and the temperature in the shower head becomes non-uniform, which cannot be achieved. Obtaining a homogeneous film composition has adverse effects on film formation characteristics, or deposits tend to adhere to the peripheral part of the shower head at a low temperature.

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