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Method for correcting mask pattern

A technology of mask pattern and correction method, which is applied in the photoengraving process, optics, instruments and other directions of the pattern surface, can solve the problem of limiting the scope of the semiconductor process, and achieve the effect of reducing unnecessary correction patterns

Active Publication Date: 2010-12-22
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above method tends to generate half-isolated spaces 5 between adjacent patterns, and the semi-isolated spaces 5 will limit the scope of the semiconductor manufacturing process (Process Window)

Method used

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  • Method for correcting mask pattern
  • Method for correcting mask pattern
  • Method for correcting mask pattern

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Embodiment Construction

[0015] The correction method of the mask pattern of the present invention will be further described in detail below.

[0016] Figures 2A to 2C It is a schematic diagram of the calibration method of the mask pattern of the present invention. like Figure 2A As shown, a mask pattern 6 is shown, and the mask pattern 6 is composed of two regions 7 and 8 with the same width and a middle region 9 . The mask pattern correction method of the present invention first performs optical proximity correction on each area 7, 8, and 9 on the mask pattern 6, such as Figure 2B As shown, the auxiliary patterns 10a, 10b, 10c, 10d, 11a, 11b are obtained as correction patterns, and then the depth of focus (DOF) is calculated for the pattern edge based on the optical proximity correction database, because the edge position is wrong and defocused The center (defocus center) changes synchronously. According to the calculated focal depth value, the defocus center range is enlarged. Generally, the ...

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Abstract

The invention relates to a mask pattern correction method, comprising the following steps: providing a mask pattern; carrying out optical proximity correction to the mask pattern so as to form a corrected pattern; calculating the focal depth of the pattern edge after optical proximity correction; and re-defining the corrected pattern based on the focal depth of the corrected pattern edge so as toform the final corrected pattern. The application of the mask pattern correction method can reduce the corrected patterns caused by optical proximity correction.

Description

technical field [0001] The invention relates to a method for correcting a pattern of a mask, in particular to a method for calculating the focal depth of a pattern edge. Background technique [0002] As VLSI manufacturing enters the deep submicron era, the size requirements for mask patterns in lithography are further reduced. When light is exposed to the resist through the mask, the pattern on the mask is transferred to form a resist pattern. If the size of the mask pattern is reduced, the size of the mask pattern will be close to the wavelength of the light that forms the resist pattern, resulting in an optical proximity effect (Optical Proximity Effect, OPE), and the pattern on the mask will be deformed during transfer. Moreover, the photolithographic quality of adjacent pattern areas on the mask pattern is increasingly affected by the optical proximity effect. [0003] A general method for eliminating the optical proximity effect uses optical proximity corrections (Opt...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/14G03F1/36
Inventor 刘庆炜
Owner SEMICON MFG INT (SHANGHAI) CORP