Development method of photoresist mask pattern

A photoresist mask and developing method technology, applied in the field of photoresist mask pattern development, can solve problems such as poor flatness of sidewalls of the mask pattern, and achieve the effects of improving flatness and accuracy

Active Publication Date: 2011-12-07
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] In the prior art, the mask pattern formed by oxygen dry development has poor flatness of the side wall of the mask pattern due to the influence of reaction rate and air flow

Method used

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  • Development method of photoresist mask pattern
  • Development method of photoresist mask pattern
  • Development method of photoresist mask pattern

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Embodiment Construction

[0039] The photoresist mask pattern development method described in the following detailed description and examples, before adopting plasma dry etching, adopts the first etching gas that contains VIIA group atom in the periodic table to photoresist Pre-etching, due to the presence of VIIA group atoms, reduces the activity of the photoresist in the etching process, chemically reacting with oxygen or other plasmas, reduces the reaction rate, and can improve the flatness of the side wall of the mask pattern , to improve the precision of the photolithography process.

[0040] The specific implementation manners of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0041] figure 2 Shown is a process flow chart of a specific embodiment of the method for developing photoresist mask patterns of the present invention. The method includes the following steps: step S101, providing a semiconductor substrate coated with photoresist a...

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Abstract

A developing method for a photoresist mask pattern, comprising: a developing method for a photoresist mask pattern, characterized in that it includes: a) providing a semiconductor substrate whose surface is coated with photoresist and subjected to exposure treatment; b) the semiconductor substrate is placed in an etching reaction chamber; c) the photoresist is pre-etched using the first etching gas containing atoms of group VIIA in the periodic table; d) the photoresist is pre-etched using the second etching gas The resist is etched. The invention has the advantages that the flatness of the side wall of the mask pattern can be improved, and the precision of the photolithography process can be improved.

Description

technical field [0001] The invention relates to an integrated circuit manufacturing method, in particular to a developing method for photoresist mask patterns. Background technique [0002] Photolithography is one of the key technologies in the field of integrated circuit manufacturing. The accuracy of the photolithography process plays a vital role in the yield and quality of the chip. The improvement of photolithography process is always a hot issue in the field of integrated circuit manufacturing. [0003] Currently, in the advanced integrated circuit manufacturing process, a deep ultraviolet (Deep UltraViolent, DUV) light source and a composite photoresist are generally used in the photolithography process. One of the common composition photoresists is a composition photoresist composed of photoacid-generating substances and ester-polymerized organic photoresist substances. [0004] The above photolithography process generally includes the following steps: [0005] G...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): G03F7/36G03F7/26G03F7/00H01L21/027
Inventor崔彰日
OwnerSEMICON MFG INT (SHANGHAI) CORP