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Data storage method and apparatus for flash memory

A data storage device and data storage technology, applied in the direction of memory address/allocation/relocation, etc., can solve problems such as crosstalk in erasable areas, unbalanced use times of erasable areas, etc., to achieve unbalanced use times, solve Effects of Data Loss

Active Publication Date: 2009-06-17
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
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AI Technical Summary

Problems solved by technology

[0005] The invention provides a data storage method and device for flash memory, which solves the problem of unbalanced use times between erasable areas
[0006] The present invention also provides a data storage method and device for flash memory, which solves the problem of crosstalk between erasable areas in the same physical entity area

Method used

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  • Data storage method and apparatus for flash memory
  • Data storage method and apparatus for flash memory
  • Data storage method and apparatus for flash memory

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Embodiment Construction

[0078] The data storage method and device for flash memory disclosed by the present invention obtain a physical entity area different from the physical entity area in which data was written last time when performing a data writing operation, and obtain the physical entity area in which the state is standby an erasable area; writing data into the erasable area whose status is standby, and marking the status of the erasable area as used after the data is written.

[0079] In the data storage method and device for flash memory disclosed in the present invention, when the data writing operation is performed, when the accumulated writing times of the physical entity area reaches the set threshold value, the state is set to the erasable area in use. The data is transferred to the erasable area whose status is spare, and the erasable area from which the data is transferred is marked as spare.

[0080] The data storage method and device for flash memory provided by specific embodiment...

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Abstract

A data storing method and apparatus for flash memory, the method comprises: acquiring a physical entity area which is different from the physical entity area for being written with data last time; acquiring an erasable area of the spare state in the physical entity area, if the cumulative data writing times of the physical entity area are not reached to a threshold value; transferring the data stored in the erasable area of using state into the other erasable areas of spare state and marking the state of the erasable area where the data is transferred to be spare, if the cumulative data writing times of the physical entity area are reached to the threshold value; writing the data into the erasable area of the spare state and marking the state of the erasable area to be using after completing the data writing. The data storing method and apparatus for flash memory can solve the problems of unbalanced using times between the erasable areas and easy loss of the data caused by crossfire.

Description

technical field [0001] The invention relates to a data storage method and device for flash memory, in particular to a data storage method and device for nitride read-only memory flash memory. Background technique [0002] Memory is a very important device in the field of electronic information at present, and is used to save data information in the system. Non-volatile memory (Non-volatile memory, NVM) is one of the devices widely used in the field of large-scale integrated circuits. It has the function of storing data, and can provide data writing, reading, and erasing operations, even if the The power supply, whose stored content does not disappear, has the function of saving data. Flash Memory (Flash Memory) is a common non-volatile memory. Nitride read only memory (NROM) is a new type of flash memory. The data storage density of NROM flash memory is higher than that of traditional flash memory, and it does not need to adopt special manufacturing process like other typ...

Claims

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Application Information

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IPC IPC(8): G06F12/06
Inventor 柯罗特
Owner SEMICON MFG INT (SHANGHAI) CORP
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